Discretization schemes for high-frequency semiconductor device models

IEEE Transactions on Antennas and Propagation

Volumn 45, Issue 3, 1997, Pages 443-456

  Ghione, Giovanni ^a   Benvenuti, Augusto ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

Numerical analysis; Semiconductor device modeling

Indexed keywords

COMPUTATIONAL COMPLEXITY; ELECTROMAGNETIC WAVES; FINITE ELEMENT METHOD; NUMERICAL ANALYSIS; TIME DOMAIN ANALYSIS;

BOLTZMANN TRANSPORT EQUATION; DISCRETIZATION; SCHARFETTER GUMMEL SCHEME;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031096060     PISSN: 0018926X     EISSN: None     Source Type: Journal    
DOI: 10.1109/8.558659     Document Type: Article

References (58)

1. MM. A. AlsunaidiS. M. Sohel Imtiaz, and S. M. El-Ghazali, Electromagnetic wave effects on microwave transistors using a full-wave time-domain model, IEEE Trans. Microwave Theory Tech., vol. 44, pp. 799-808, June 1996.
2. MK. M. ConnolloyS. M. El-Ghazaly, and R. O. Grondin, New modeling approach for high frequency devices: Application to ultrafast optically controlled switches, in Proc. 20th Eur. Microwave Conf., Paris, France, June 1990, vol. 1, pp. 563-568.
3. MG. H. SongK. Hess, T. Kerkhoven, and U. Ravaioli, Two-dimensional simulation of quantum-well lasers, Europ. Trans. Telecommunicate vol. 1, no. 4, pp. 375-381, 1990.
4. MC. Jacoboni and L. ReggianiThe Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials, Rev. Mod. Phys., vol. 55, pp. 645-707, July 1983.
5. MM. ReiserA two-dimensional numerical FET model for DC, AC, and large signal analysis, IEEE Trans. Electron Devices, vol. ED-20, pp. 35-45, Jan. 1973.
6. MJ. W. SlotboomComputer-aided two-dimensional analysis of bipolar transistors, IEEE Trans. Electron Devices, vol. ED-20, pp. 669-679, Aug. 1973.
7. MD. L. Scharfetter and H. K. GummelLarge signal analysis of a silicon read diode oscillator, IEEE Trans. Electron Devices, vol. ED-16, pp. 64-77, Jan. 1969.
8. ME. M. ButurlaP. E. Cottrell, B. M. Grossman, and K. A. Salsburg, Finite element analysis of semiconductor devices: The FIELDAY program, IBM J. Res. Develop., vol. 25, no. 4, pp. 218-231, July 1981.
9. MS. SelberherrAnalysis and Simulation of Semiconductor Devices. Wien, Germany: Springer-Verlag, 1984.
10. MM. R. PintoC. S. Rafferty, and R. W. Dutton, PISCES-II: Poisson and continuity equation solver, Stanford Electron. Lab. Tech. Rep., Stanford Univ., 1984.
11. MG. BaccaraniR. Guerrieri, P. Ciampolini, and M. Rudan, HFIELDS: A highly-flexible 2-D semiconductor-device analysis program, in Proc. NASECODE IV. Dublin, Ireland: Boole Press, 1985, pp. 3-12.
12. MM. R. PintoSimulation of ULSI device effects, in Proc. 3rd Int. Symp. Ultra Large Scale Intégrât. Sei. Techno!. Proc. Electrochem. Soc., J. Andrews and G. Cellar, Eds., 1991, vol. PV91-11, pp. 43-51.
13. MM. Sharma and G. F. CareySemiconductor device modeling using flux upwind finite elements, COMPEL, vol. 8, no. 4, pp. 219-224, 1989.
14. ME. FatemiJ. Jerome, and S. Osher, Solution of the hydrodynamic device model using high-order nonoscillatory shock capturing algorithms, IEEE Trans. Computer-Aided Design, vol. 10, pp. 232-243, Feb. 1991.
15. MA. GnudiD. Ventura, G. Baccarani, and F. Odeh, Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation, Solid-State Electron., vol. 36, no. 4, pp. 575-581, 1993.
16. MK. KometarG. Zandler, and P. Vogl, Lattice-gas cellular-automaton method for semiclassical transport in semiconductors, Phys. Rev. B, vol. 46, p. 1382, 1992.
17. MC. Jacoboni and P. LugliThe Monte Carlo Method for Semiconductor Device Simulation. New York: Springer-Verlag, 1990.
18. MM. V. FischettiMonte Carlo simulation of transport in technologically significant semiconductors of diamond and zinc-blende structures-Part I: Homogeneous transport, IEEE Trans. Electron Devices, vol. 38, pp. 634-649, Mar. 1991.
19. MK. BlotekjaerTransport equations for electron in two-Walley semiconductors, IEEE Trans. Electron Devices, vol. ED-17, pp. 38-47, Jan. 1970.
20. MJ. W. Roberts and S. G. ChamberlainEnergy-momentum transport model suitable for small geometry silicon device simulation, COMPEL, vol. 9, no. 1, pp. 1-22, 1990.
21. MA. M. Anile and S. PennisiThermodynamic derivation of the hydrodynamical model for charge transport in semiconductors, Phys. Rev. B, vol. B46, no. 20, pp. 13186-13193, 1992.
22. MC. M. Snowden and D. LoretTwo-dimensional hot-electron models for short-gate-length GaAs MESFET's, IEEE Trans. Electron Devices, vol. ED-34, pp. 212-223, Feb. 1987.
23. MW. R. Curtice and Y. H. YunA temperature model for the GaAs MESFET, IEEE Trans. Electron Devices, vol. ED-28, pp. 954-962, Aug. 1981.
24. MA. ForghieriR. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, A new discretization strategy of the semiconductor equations comprising momentum and energy balance, IEEE Trans. Computer-Aided Design, vol. 28, pp. 231-242, Feb. 1988.
25. MG. Morthier and R. BaetsModeling of distributed feedback lasers, in Compound Semiconductor Device Modeling, C. M. Snowden and R. E. Miles, Eds. New York: Springer-Verlag, 1993, pp. 119-148.
26. MR. L. KuvasEquivalent circuit model of FET including distributed gate effects, IEEE Trans. Electron Devices, vol. ED-27, pp. 1193-1195, June 1980.
27. MG. Ghione and C. NaldiModeling and simulation of wave propagation effects in MESFET devices based on physical models, in Proc. ESSDERC '87, Bologna, Italy, Sept. 1987, pp. 317-320.
28. MR. H. Jansen and P. PogatzkiNonlinear distributed modeling of multifinger FET's/HEMT's in terms of layout geometry and process data, in Proc. 21st Eur. Microwave Conf., Stuttgart, Germany, Sept. 1991, pp. 609-614.
29. MW. Heinrich and H. L. HartnagelWave propagation on MESFET electrodes and its influence on transistor gain, IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1-8, Jan. 1987.
30. MS. P. Gaur and D. H. NavonTwo-dimensional carrier flow in a transistor structure under nonisothermal conditions, IEEE Trans. Electron Devices, vol. ED-23, pp. 50-57, Jan. 1976.
31. MA. SchutzS. Selberherr, and H. W. Potzl, Temperature distribution and power dissipation in MOSFET's, Solid-State Electron., vol. 27, pp. 394-395, Apr. 1984.
32. MG. GhioneP. Golzio, and C. Naldi, Self-consistent thermal modeling of GaAs MESFET's: A comparative analysis of power device mountings focus on computer oriented design techniques for microwave circuits-Part II, Alta Frequenza, vol. LVII, pp. 311-319, Sept. 1988.
33. MG. Ghione and C. NaldiHigh-resolution self-consistent thermal modeling of multigate power GaAs MESFET's, in Proc. IEDM, Washington, DC, Dec. 1989, pp. 147-150.
34. MA. BenvenutiG. Ghione, M. R. Pinto, W. M. Coughran, Jr., and N. L. Schryer, Coupled thermal-fully hydrodynamic simulation of InP-based HBT's, in IEDM Tech. Dig., San Francisco, CA, 1992, pp. 737-740.
35. MS. E. LauxTechniques for small-signal analysis of semiconductor devices, IEEE Trans. Electron Devices, vol. ED-32, pp. 2028-2037, Oct. 1985.
36. MV. RizzoliC. Cecchetti, A. Lipparini, and F. Mastri, General-purpose harmonic balance analysis of nonlinear microwave circuits under multitone excitations, IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1650-1660, Dec. 1988.
37. MB. TroyanovskyZ. Yu, and R. W. Dutton, Large signal frequency domain device analysis via the harmonic balance technique, in Proc. SISDEP, Erlangen, Germany, Sept. 1995, vol. 6, pp. 114-117.
38. MG. Ghione and F. FilicoriA computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices, IEEE Trans. Computer-Aided Design, vol. 12, pp. 425-438, Mar. 1993.
39. MJ. J. Barnes and R. J. LomaxFinite-element methods in semiconductor device simulation, IEEE Trans. Electron Devices vol. ED-24, pp. 1082-1089, Aug. 1977.
40. MO. C. ZienkiewiczThe Finite Element Method in Engineering Science. London, U.K.: McGraw-Hill, 1971.
41. MA. N. Brooks and T. J. R. HughesStreamline upwind/Petrov-Galerkin formulations for convection dominated flows with particular emphasis on the incompressible Navier-Stokes equations, Computer Methods Appl. Mech. Eng., vol. 32, pp. 199-259, 1982.
42. MM. S. MockAnalysis of Mathematical Models of Semiconductor Devices. Dublin, Ireland: Boole, 1983.
43. MS. E. Laux and B. M. GrossmanA general control-volume formulation for modeling impact ionization in semiconductor transport, IEEE Trans. Electron Devices, vol. ED-32, pp. 2076-2082, Oct. 1985.
44. w.-MS. ChoiJ.-G. Ahn, Y.-J. Park, H.-S. Min, and C.-G. Hwang, A time dependent hydrodynamic device simulator SNU 2-D with new
45. discretization scheme and algorithm, MIEEE Trans. Computer-Aided Designvol. 13, pp. 899-908, July 1994.
46. ME. D. LyumkisB. S. Polsky, A. I. Shur, and P. Visocky, Transient semiconductor device simulation including energy balance equation, COMPEL, vol. II, no. 2, pp. 311-325, 1992.
47. MJ. P. KreskovskyA hybrid central difference scheme for the solidstate device simulation, IEEE Trans. Electron Devices, vol. ED-34, pp. 1128-1133, May 1987.
48. MT.-W. Tang and M.-K. leongDiscretization of flux densities in device simulations using optimum artificial diffusivity, IEEE Trans. ComputerAided Design, vol. 14, pp. 1309-1315, Nov. 1995.
49. MM. Rudan and F. OdehMulti-dimensional discretization scheme for the hydrodynamic model of semiconductor devices, COMPEL, vol. 5, no. 3, pp. 149-183, 1986.
50. MK. SouissiF. Odeh, and A. Gnudi, A note on current discretization in the hydromodel, COMPEL, vol. 10, no. 4, pp. 475-485, 1991.
51. MY. K. Feng and A. HintzSimulation of submicrometer GaAs MESFET's using a full dynamic transport model, IEEE Trans. Electron Devices, vol. 35, pp. 1419-1431, Sept. 1988.
52. MC. L. GardnerNumerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device, IEEE Trans. Electron Devices, vol. 38, pp. 392-398, Feb. 1991.
53. MA. BenvenutiW. M. Coughran, Jr., M. R. Pinto, and N. L. Schryer, Hierarchical PDE simulation of nonequilibrium transport effects in semiconductor devices, in Proc. NUPAD IV, Seattle, WA, May 1992, pp. 155-160.
54. MA. BenvenutiW. M. Coughran, Jr., and M. R. Pinto, A thermalfully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation, IEEE Trans. Electron Devices, to be published.
55. W. M. Coughran, Jr. and N. L. Schryer, Faster device modeling using adaptive spatial meshes and continuation, in Proc. NUPAD III, Honolulu, HI, June 1990, pp. 85-86.
56. MR. E. BankW. M. Coughran, W. Fichtner, E. Grosse, D. Rose, and R. K. Smith, Transient simulation of silicon devices and circuits, IEEE Trans. Electron Devices, vol. ED-32, pp. 1992-2006, Oct. 1985.
57. MN. R. AluruK. H. Law, P. M. Pinsky, and R. W. Dutton, An analysis of the hydrodynamic semiconductor device model-boundary conditions and simulations, COMPEL, vol. 14, pp. 157-185, 1995.
58. MC. Shu and S. OsherEfficient implementation of essentially nonoscillatory shock-capturing schemes, II, J. Comp. Physics, vol. 83, pp. 32-78, 1989.