-
1
-
-
0022044296
-
An investigation of steady-state velocity overshoot effects in Si and GaAs devices
-
G. Baccarani and M. R. Wordeman, “An investigation of steady-state velocity overshoot effects in Si and GaAs devices,” Solid-State Electron., vol. 28, pp. 407–416, 1985.
-
(1985)
Solid-State Electron.
, vol.28
, pp. 407-416
-
-
Baccarani, G.1
Wordeman, M.R.2
-
3
-
-
0014705867
-
''Transport equations for electrons in two-valley semiconductors
-
K. Blotekjaer, ‘‘Transport equations for electrons in two-valley semiconductors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 38–47, 1970.
-
(1970)
IEEE Trans. Electron Devices, vol. ED-17
, pp. 38-47
-
-
Blotekjaer, K.1
-
5
-
-
0009509593
-
Carrier mobilities in silicon empirically related to doping and field
-
D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE, vol. 55, pp. 2192–2913, 1967.
-
(1967)
Proc. IEEE
, vol.55
, pp. 2192-2913
-
-
Caughey, D.M.1
Thomas, R.E.2
-
6
-
-
0020141359
-
Two-dimensional numerical simulation of energy transport effects in Si and GaAs, MESFET's
-
R. K. Cook and J. Frey, “Two-dimensional numerical simulation of energy transport effects in Si and GaAs, MESFET's,” IEEE Trans. Electron Devices, vol. ED-29, 970–977, 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 970-977
-
-
Cook, R.K.1
Frey, J.2
-
7
-
-
0020142314
-
An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices
-
R. K. Cook and J. Frey, “An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices,” COMPEL, vol. 1, pp. 65–87, 1982.
-
(1982)
COMPEL
, vol.1
, pp. 65-87
-
-
Cook, R.K.1
Frey, J.2
-
10
-
-
0024665830
-
Numerical methods for the hydrodynamic device model: Subsonic flow
-
C. L. Gardner, J. W. Jerome, and D. J. Rose, “Numerical methods for the hydrodynamic device model: Subsonic flow,” IEEE Trans. Computer-Aided Design, vol. 8, pp. 501–507, 1989.
-
(1989)
IEEE Trans. Computer-Aided Design
, vol.8
, pp. 501-507
-
-
Gardner, C.L.1
Jerome, J.W.2
Rose, D.J.3
-
11
-
-
0021973244
-
The role of boundary conditions in near- and submicrometer length gallium arsenide structures
-
N. G. Einspruch and R. S. Bauer, Ed. New York: Academic
-
H. L. Grubin and J. P. Kreskovsky, “The role of boundary conditions in near- and submicrometer length gallium arsenide structures,” in VLSI Electronics: Microstructure Science Vol. 10, N. G. Einspruch and R. S. Bauer, Ed. New York: Academic, 1985, pp. 237–321.
-
(1985)
VLSI Electronics: Microstructure Science
, vol.10
, pp. 237-321
-
-
Grubin, H.L.1
Kreskovsky, J.P.2
-
12
-
-
0018006361
-
Incompletely parabolic systems in fluid dynamics
-
B. Gustafsson and A. Sundstrom, “Incompletely parabolic systems in fluid dynamics,” SIAM J. Appl. Math., vol. 35, pp. 343–357, 1978.
-
(1978)
SIAM J. Appl. Math.
, vol.35
, pp. 343-357
-
-
Gustafsson, B.1
Sundstrom, A.2
-
13
-
-
33749725182
-
Uniformly high order accurate essentially non-oscillatory schemes, III
-
A. Harten, B. Engquist, S. Osher, and S. Chakravarthy, “Uniformly high order accurate essentially non-oscillatory schemes, III,” J. Comput. Phys., vol. 49, pp. 231–303, 1987.
-
(1987)
J. Comput. Phys.
, vol.49
, pp. 231-303
-
-
Harten, A.1
Engquist, B.2
Osher, S.3
Chakravarthy, S.4
-
14
-
-
0019606502
-
Ballistic electron transport in semiconductors
-
K. Hess, “Ballistic electron transport in semiconductors,” IEEE Trans. Electron Devices, vol. ED-28, 937–940, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 937-940
-
-
Hess, K.1
-
15
-
-
0018195505
-
Hot electrons in short-gate charge-coupled devices
-
K. Hess and C. T. Sah, “Hot electrons in short-gate charge-coupled devices,” IEEE Trans. Electron Devices, vol. ED-25, pp. 1399–1405, 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 1399-1405
-
-
Hess, K.1
Sah, C.T.2
-
16
-
-
0022060680
-
Semiconductor device simulators using generalized mobility models
-
S. Laux and R. Byrnes, “Semiconductor device simulators using generalized mobility models,” IBM J. Res. Develop., vol. 29, pp. 289–301, 1985.
-
(1985)
IBM J. Res. Develop.
, vol.29
, pp. 289-301
-
-
Laux, S.1
Byrnes, R.2
-
17
-
-
84980077199
-
Systems of conservation laws
-
P. D. Lax and B. Wendroff, “Systems of conservation laws,” Comm. Pure Appl. Math., vol. 13, pp. 217–237, 1960.
-
(1960)
Comm. Pure Appl. Math.
, vol.13
, pp. 217-237
-
-
Lax, P.D.1
Wendroff, B.2
-
18
-
-
0017456166
-
Transient and steady-state electron transport in GaAs and InP
-
T. J. Maloney and J. Frey, “Transient and steady-state electron transport in GaAs and InP,” J. Appl. Phys., vol. 48, pp. 781-787, 1977.
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 781-787
-
-
Maloney, T.J.1
Frey, J.2
-
19
-
-
0022120123
-
A consistent nonisothfermal extension of the Scharfetter-Gummel stable differ�ence approximation
-
C. C. McAndrew, K. Singhal, and E. L. Heasell, “A consistent nonisothfermal extension of the Scharfetter-Gummel stable differ�ence approximation,” IEEE Electron Device Lett., vol. EDL-6, pp. 446-447, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 446-447
-
-
McAndrew, C.C.1
Singhal, K.2
Heasell, E.L.3
-
20
-
-
0019527791
-
Determination of the transient regime in semiconduc�tor devices using relaxation time approximations
-
J. P. Nougier, J. Vaissiere, D. Gasquet, J. Zimmermann, and E. Constant, “Determination of the transient regime in semiconduc�tor devices using relaxation time approximations,” J. Appl. Phys., vol. 52, pp. 825-832, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 825-832
-
-
Nougier, J.P.1
Vaissiere, J.2
Gasquet, D.3
Zimmermann, J.4
Constant, E.5
-
21
-
-
0023419223
-
Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device
-
F. Odeh, M. Rudan, and J. White, “Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device,” COMPEL, vol. 6, pp. 151-1970, 1987.
-
(1987)
COMPEL
, vol.6
, pp. 151-1970
-
-
Odeh, F.1
Rudan, M.2
White, J.3
-
22
-
-
0001269324
-
Calculation of distribution functions by exploiting the stability of the steady-state
-
H. D. Rees, “Calculation of distribution functions by exploiting the stability of the steady-state,” J. Phys. Chem. Solids, vol. 30, pp. 643-655, 1967.
-
(1967)
J. Phys. Chem. Solids
, vol.30
, pp. 643-655
-
-
Rees, H.D.1
-
23
-
-
2942757053
-
Approximate Riemann solvers, parameter vectors, and difference schemes
-
P. Roe, “Approximate Riemann solvers, parameter vectors, and difference schemes,” J. Comput. Phys., vol. 43, pp. 357-372, 1981.
-
(1981)
J. Comput. Phys.
, vol.43
, pp. 357-372
-
-
Roe, P.1
-
24
-
-
0015346006
-
Electron dynamics in short channel field effect transis�tors
-
J. Ruch, “Electron dynamics in short channel field effect transis�tors,” IEEE Trans. Electron Devices, vol. ED-19, pp. 652-654, 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 652-654
-
-
Ruch, J.1
-
25
-
-
0022776857
-
Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices
-
M. Rudan and F. Odeh, “Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices,” COMPEL, vol. 5, pp. 149-183, 1986.
-
(1986)
COMPEL
, vol.5
, pp. 149-183
-
-
Rudan, M.1
Odeh, F.2
-
26
-
-
0003497098
-
An Analysis and Simulation of Semiconductor Devices
-
New York: Springer-Verlag
-
S. Selberherr, An Analysis and Simulation of Semiconductor Devices. New York: Springer-Verlag, 1984.
-
-
-
Selberherr, S.1
-
27
-
-
0001568854
-
Efficient implementation of essen�tially non-oscillatory shock capturing schemes, II
-
C.-W. Shu and S. Osher, “Efficient implementation of essen�tially non-oscillatory shock capturing schemes, II,” J. Comp. Phys., vol. 83, pp. 32-78, 1989.
-
(1989)
J. Comp. Phys.
, vol.83
, pp. 32-78
-
-
Shu, C.-W.1
Osher, S.2
-
28
-
-
33747239790
-
Influence of nonuniform field distribution on fre�quency limits of GaAs field effect transistors
-
M. S. Shur, “Influence of nonuniform field distribution on fre�quency limits of GaAs field effect transistors,” Electron Lett., vol. 12, pp. 615-616, 1976.
-
(1976)
Electron Lett.
, vol.12
, pp. 615-616
-
-
Shur, M.S.1
-
29
-
-
0018545753
-
Ballistic transport in semicon�ductors at low temperatures for low-power high-speed logic
-
M. S. Shur and E. F. Eastman, “Ballistic transport in semicon�ductors at low temperatures for low-power high-speed logic,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1677-1683, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1677-1683
-
-
Shur, M.S.1
Eastman, E.F.2
-
30
-
-
36149018649
-
Diffusion of hot and cold electrons in semiconduc�tor barriers
-
R. Stratten, “Diffusion of hot and cold electrons in semiconduc�tor barriers,” Phys. Rev., vol. 126, pp. 2002-2014, 1962.
-
(1962)
Phys. Rev.
, vol.126
, pp. 2002-2014
-
-
Stratten, R.1
-
31
-
-
84980151705
-
Initial boundary value problems for incom�pletely parabolic systems
-
J. C. Strikwerda, “Initial boundary value problems for incom�pletely parabolic systems,” Comm. Pure Appl. Math., vol. 30, pp. 797-822, 1977.
-
(1977)
Comm. Pure Appl. Math.
, vol.30
, pp. 797-822
-
-
Strikwerda, J.C.1
-
32
-
-
0042734842
-
Extension of the Scharfetter-Gummel algorithm to the energy balance equation
-
T. Tang, “Extension of the Scharfetter-Gummel algorithm to the energy balance equation,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1912-1914, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1912-1914
-
-
Tang, T.1
-
33
-
-
0020103264
-
Current equations for velocity overshoot
-
K. K. Thomber, “Current equations for velocity overshoot,” IEEE Electron Devices Lett., vol. EDL-3, pp. 69-71, 1982.
-
(1982)
IEEE Electron Devices Lett.
, vol.EDL-3
, pp. 69-71
-
-
Thomber, K.K.1
|