-
1
-
-
0019596416
-
Finite-element analysis of semiconductor devices: The FIELDAY program
-
E. M. Buturla, P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite-element analysis of semiconductor devices: The FIELDAY program,” IBM J. Res. Develop., vol. 25, no. 4, pp. 218–231, July 1981.
-
(1981)
IBM J. Res. Develop.
, vol.25
, Issue.4
, pp. 218-231
-
-
Buturla, E.M.1
Cottrell, P.E.2
Grossman, B.M.3
Salsburg, K.A.4
-
2
-
-
84918066677
-
Finite-element solution of the semiconductor transport equations
-
B. M. Grossman, E. M. Buturla, and P. E. Cottrell, “Finite-element solution of the semiconductor transport equations,” in Computing Methods in Applied Science and Engineering, VI, Amsterdam, The Netherlands: Elsevier, (North Holland), pp. 697–709, 1984.
-
(1984)
Computing Methods in Applied Science and Engineering, VI Amsterdam, The Netherlands: Elsevier(North Holland)
, pp. 697-709
-
-
Grossman, B.M.1
Buturla, E.M.2
Cottrell, P.E.3
-
3
-
-
0020180710
-
Numerical methods for semiconductor device simulation
-
R. E. Bank, D. J. Rose and W. Fichtner, “Numerical methods for semiconductor device simulation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1031–1041, Sept. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1031-1041
-
-
Bank, R.E.1
Rose, D.J.2
Fichtner, W.3
-
4
-
-
84939379089
-
Two-carrier simulation of complex device structures in minicomputer environments
-
M. R. Pinto, “Two-carrier simulation of complex device structures in minicomputer environments,” presented at the Second Conf. Numerical Simulation of VLSI Devices, Boston, MA, Nov. 12–14, 1984.
-
(1984)
presented at the Second Conf Numerical Simulation of VLSI Devices, Boston, MA Nov
, pp. 12-14
-
-
Pinto, M.R.1
-
5
-
-
0017996560
-
A numerical model of avalanche breakdown in MOSFET’s
-
T. Toyabe, K. Yamaguchi, S. Asai, and M. S. Mock, “A numerical model of avalanche breakdown in MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-25, pp. 825–832, July 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 825-832
-
-
Toyabe, T.1
Yamaguchi, K.2
Asai, S.3
Mock, M.S.4
-
6
-
-
0020098857
-
A two-dimensional model of the avalanche effect in MOS transistors
-
A. Schutz, S. Selberherr, and H. W. Potzl, “A two-dimensional model of the avalanche effect in MOS transistors,” Solid-State Electron., vol. 25, no. 3, pp. 177–183, Mar. 1982.
-
(1982)
Solid-State Electron.
, vol.25
, Issue.3
, pp. 177-183
-
-
Schutz, A.1
Selberherr, S.2
Potzl, H.W.3
-
7
-
-
0020113843
-
Analysis of breakdown phenomena in MOSFET’s
-
A. Schiitz, S. Selberherr and H. W. Nazi, “Analysis of breakdown phenomena in MOSFET’s,” IEEE Trans. Computer-Aided Design, vol. CAD-1, pp. 77–85, Apr. 1982.
-
(1982)
IEEE Trans. Computer-Aided Design
, vol.CAD-1
, pp. 77-85
-
-
Schiitz, A.1
Selberherr, S.2
Nazi, H.W.3
-
8
-
-
0020180846
-
Numerical simulation of hot-electron phenomena
-
D. S. Watanabe and S. Slamet, “Numerical simulation of hot-electron phenomena,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1042–1049, 1049, Sept. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1042-1049
-
-
Watanabe, D.S.1
Slamet, S.2
-
9
-
-
0009667182
-
Temperature dependence of avalanche multiplication in semiconductors
-
C. R. Crowell and S. M. Sze, “Temperature dependence of avalanche multiplication in semiconductors,” Appl. Phys. Lett., vol. 9, no. 6, pp. 242–244, Sept. 1966.
-
(1966)
Appl. Phys. Lett.
, vol.9
, Issue.6
, pp. 242-244
-
-
Crowell, C.R.1
Sze, S.M.2
-
10
-
-
84916389355
-
Large-signal analysis of a silicon Read diode oscillator
-
D. L. Scharfetter and H. K. Gummi, “Large-signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, Jan. 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 64-77
-
-
Scharfetter, D.L.1
Gummi, H.K.2
-
11
-
-
84939366147
-
Application of the finite element method to semiconductor transport
-
P. E. Cottrell and E. M. Buturla, “Application of the finite element method to semiconductor transport,” in Tenth Asilomar Conf. on circuits, Systems, and Computers, Pacific Grove, CA, pp. 135–139, Nov. 1976.
-
(1976)
Tenth Asilomar Conf. on circuits, Systems, and Computers Pacific Grove, CA
, pp. 135-139
-
-
Cottrell, P.E.1
Buturla, E.M.2
-
12
-
-
0022060680
-
Semiconductor device simulation using generalized mobility models
-
S. E. Laux and R. G. Byrnes, “Semiconductor device simulation using generalized mobility models,” IBM.1. Res. Develop. vol. 29, no. 3, pp. 289–301, May 1985.
-
(1985)
IBM.1. Res. Develop.
, vol.29
, Issue.3
, pp. 289-301
-
-
Laux, S.E.1
Byrnes, R.G.2
-
14
-
-
0020180679
-
Numerical solution of the semiconductor transport equations with current boundary conditions
-
B. M. Grossman and M. J. Hargrove, “Numerical solution of the semiconductor transport equations with current boundary conditions,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1092–1096, Sept. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1092-1096
-
-
Grossman, B.M.1
Hargrove, M.J.2
-
15
-
-
0021640152
-
A study of avalanche breakdown in scaled n-MOSFETs
-
S. E. Laux and F. H. Gaensslen, “A study of avalanche breakdown in scaled n-MOSFETs,” presented at the 1984 Int. Electron Devices Meeting, San Francisco, CA, Dec. 10–42, 1984.
-
(1984)
presented at the 1984 Int. Electron Devices Meeting, San Francisco, CA
-
-
Laux, S.E.1
Gaensslen, F.H.2
-
16
-
-
0022062238
-
Ani-mation and 3D color display of multiple variable data: Aplication to semiconductor design
-
E. J. Farrell, S. E. Laux, P. L. Corson, and E. M. Buturla, “Ani-mation and 3D color display of multiple variable data: Aplication to semiconductor design,” IIJMJ. Res. Develop., vol. 29, no. 3, pp. 302–315, 315, May 1985.
-
(1985)
IIJMJ. Res. Develop.
, vol.29
, Issue.3
, pp. 302-315
-
-
Farrell, E.J.1
Laux, S.E.2
Corson, P.L.3
Buturla, E.M.4
|