Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 268-276

  Song, Miryeong ^a,c   MacWilliams, Kenneth P ^a   Woo, Jason C S ^b  

^a Hannam University   (South Korea)

^b NOVELLUS SYSTEMS INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; LOW TEMPERATURE OPERATIONS; TEMPERATURE;

HOT CARRIER EFFECT; NMOS DEVICE; PMOS DEVICE; ROOM TEMPERATURE;

MOS DEVICES;

EID: 0031079522     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557714     Document Type: Article

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