A novel monolithic HEMT LNA integrating HBT-tunable active-feedback linearization by selective MBE

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2384-2391

  Kobayashi, Kevin W ^a   Streit, Dwight C ^a   Qki, Aaron K ^a   Umemoto, Donald K ^a   Block, Thomas R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COST EFFECTIVENESS; FEEDBACK CONTROL; GAIN CONTROL; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERMODULATION; LINEARIZATION; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SIGNAL TO NOISE RATIO; TUNING;

ACTIVE FEEDBACK LINEARIZATION; LOW NOISE AMPLIFIERS (LNA);

MICROWAVE AMPLIFIERS;

EID: 0030412651     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554566     Document Type: Article

References (24)

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