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Volumn 5, Issue 12, 1995, Pages 442-444

A Novel Monolithic LNA Integrating a Common-Source HEMT with an HBT Darlington Amplifier

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FEEDBACK AMPLIFIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; SPURIOUS SIGNAL NOISE; TOPOLOGY;

EID: 0029481987     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.481855     Document Type: Article
Times cited : (13)

References (5)
  • 1
    • 0028728419 scopus 로고
    • Monolithic HEMT-HBT integration for novel microwave circuit applications
    • Oct.
    • D. C. Streit, D. K. Umemoto, K. W. Kobayashi, and A. K. Oki, “Monolithic HEMT-HBT integration for novel microwave circuit applications,” in IEEE GaAs IC Symp. Dig., Philadelphia, PA, Oct. 1994.
    • (1994) IEEE GaAs IC Symp. Dig.
    • Streit, D.C.1    Umemoto, D.K.2    Kobayashi, K.W.3    Oki, A.K.4
  • 3
    • 0029306166 scopus 로고
    • A novel monolithic HBT-p-i-n-HBT integrated circuit with HBT feedback and p-i-n diode variable gain control
    • May
    • K. W. Kobayashi, D. C. Streit, D. K. Umemoto, and A. K. Oki, “A novel monolithic HBT-p-i-n-HBT integrated circuit with HBT feedback and p-i-n diode variable gain control,” IEEE Trans. Microwave Theory Tech., vol. 43, no. 5, pp. 1004-1009, May 1995.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , Issue.5 , pp. 1004-1009
    • Kobayashi, K.W.1    Streit, D.C.2    Umemoto, D.K.3    Oki, A.K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.