A monolithic HEMT-HBT direct-coupled amplifier with active input matching

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 1, 1996, Pages 55-57

  Kobayashi, K W ^a,b   Streit, D C ^a,b   Umemoto, D K ^a,b   Block, T R ^a,b   Oki, A K ^a,b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; FEEDBACK; FREQUENCIES; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

ACTIVE IMPEDANCE MATCH TECHNIQUE; DARLINGTON FEEDBACK AMPLIFIER; MICROSTRIP MATCHING COMPONENTS;

MICROWAVE AMPLIFIERS;

EID: 0029774237     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.482070     Document Type: Article

References (5)

1. D. C. Streit, D. K. Umemoto, K. W. Kobayashi, and A. K. Oki, "Monolithic HEMT-HBT integration for novel microwave circuit applications," in IEEE GaAs IC Symp. Dig., Philadelphia, PA, Oct. 1994.
2. D. C. Streit, K. W. Kobayashi, A. K. Oki, and D. K. Umemoto, "A monolithic HBT-regulated HEMT LNA by selective MBE," IEEE Microwave and Guided Wave Lett., vol. 5, no. 4, pp. 124-126, Apr. 1995.
3. K. W. Kobayashi, D. C. Streit, D. K. Umemoto, and A. K. Oki, "A novel monolithic HBT-p-i-n-HBT integrated circuit with HBT feedback and p-i-n diode variable gain control," IEEE Trans. Microwave Theory Tech., vol. 43, no. 5, pp. 1004-1009, May 1995.
4. K. B. Niclas, "Active matching with common-gate MESFET's," IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 6, pp. 492-499, June 1985.
5. K. W. Kobayashi, R. Esfandiari, A. K. Oki, D. K. Umemoto, J. B. Camou, and M. E. Kim, "GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier," in IEEE GaAs IC Symp. Dig., San Diego, CA, 1989.