35-GHz HEMT Amplifiers Fabricated Using Integrated HEMT-HBT Material Grown by Selective MBE

IEEE Microwave and Guided Wave Letters

Volumn 4, Issue 11, 1994, Pages 361-363

  Umemoto, Donald K ^a   Streit, Dwight C ^a   Kobayashi, Kevin W ^a   Oki, Aaron K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BALANCED LOW NOISE AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTOR AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SELECTIVE MOLECULAR BEAM EPITAXY;

AMPLIFIERS (ELECTRONIC);

EID: 0028546085     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.329706     Document Type: Article

References (7)

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