Monolithic HEMT-HBT Integration by Selective MBE

IEEE Transactions on Electron Devices

Volumn 42, Issue 4, 1995, Pages 618-623

  Kobayashi, Kevin W ^a   Oki, Aaron K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

MONOLITHIC INTEGRATION; OPTOELECTRONIC CIRCUITS; SELECTIVE MOLECULAR BEAM EPITAXY; SINGLE EPITAXIAL GROWTH;

MOLECULAR BEAM EPITAXY;

EID: 0029291949     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372063     Document Type: Article

References (15)

1. S. Miura, O. Wada, H. Hamaguchi, M. Ito, M. Makiuchi, K. Nakai, and T. Sakurai, “A monolithically integrated AIGaAs/GaAs p-i-n/FET photoreciever by MOCVD,” IEEE Electron Device Lett., vol. 4, pp. 375–376. 1983.
2. E. G. Scott, D. Wake, A. W. Livingstone, D. A. Andrews, and G. J. Davies, “Factors affecting the growth of integrated GaInAs/InP PIN-FET by molecular beam epitaxy,” J. Vac. Sci. Tech. vol. B3, pp. 816–819, 1985.
3. Y. Zebda, R. Lai, P. Bhattacharya, D. Pavlidis, P. R. Berger, and T. L. Brock, “Monolithically integrated InP-based front-end photoreceivers,” IEEE Trans. Electron Devices, vol. 38, pp. 1324–1333, 1991.
4. J. Shibata, I. Nakao, Y. Sasai, S. Kimura, N. Hase, and H. Serizawa, “Monolithic integration of an InGaAsP/InP laser diode with hetero-junction bipolar transistors,” Appl. Phys. Lett., vol. 45, pp. 191–193, 1984.
5. P. R. Berger, N. K. Dutta, D. L. Sivco, and A. Y. Cho, “GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth,” Appl. Phys. Lett. vol. 59, pp. 2826–2828. 1991.
6. K. Itakura, Y. Shimamoto, T. Ueda, S. Katsu, and D. Ueda, “A GaAs Bi-FET technology for large scale integration,” IEDM Tech. Dig., 1989, pp. 389–392.
7. D. Cheskis, C. E. Chang, W. H. Ku, P. M. Asbeck, M. F. Chang, R. L. Pierson, and A. Sailer, “Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple manufacturable process,” IEDM Tech. Dig., 1992, pp. 91–94.
8. J. Y. Yang, F. J. Morris, D. L. Plumton, and E. N. Jeffrey, “GaAs BIJFET technology for linear circuits,” Proc. IEEE GaAs IC Symp., 1989, pp. 341–344.
9. W. E. Stanchina, R. A. Metzger, D. B. Rensch, L. M. Bums, J. F. Jensen, R. H. Walden, L. E. Larson, and P. T. Greiling, “lnP-based technology for monolithic multiple-device, multiple-function ICs,” GOMAC Dig. Papers, 1991, pp. 385–388.
10. D. C. Streit, D. K. Umemoto, J. R. Velebir, K. Kobayashi, and A. K. Oki, “Selective molecular beam epitaxy for integrated npn/pnp heterojunction bipolar tansistors.” J. Vac. Sci. Tech., vol. B10, pp. 1020–1022, 1992.
11. K. W. Kobayashi, D. K. Umemoto, J. R. Velebir, A. K. Oki, and D. C. Streit, “Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads,” IEEE J. Solid-State Circuits, vol. 28, pp. 1011–1017, 1993.
12. D. C. Streit, A. K. Oki, D. K. Umemoto, J. R. Velebir, K. S. Stolt, F. M. Yamada, Y. Saito, M. E. Hafizi, S. Bui, and L. T. Tran, “High-reliability GaAs-AIGaAs HBT's by MBE with Be base doping and InGaAs emitter contacts,” IEEE Electron Device Lett. vol. 12, pp. 471–473, 1991.
13. D. C. Streit, A. K. Oki, J. R. Velebir, K. S. Stolt, and D. Umernoto, “Effect of molecular beam epitaxy growth conditions on GaAs-AIGaAs heterojunction bipolar transistor performance: Beryllium incorporation and device reliability,” J. Vac. Sci. Tech. vol. B10, pp. 853–855, 1992.
14. M. J. Tejwani, H. Kanber, B. M. Paine, and J. M. Whelan, “Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy,” Appl. Phys. Lett., vol. 53, pp. 2411–2413, 1988.
15. R. Lai and P. K. Bhattacharya, “Performance characteristics of In-GaAs/InAIAs modulation-doped field effect transistors realized by two-step epitaxy: effects of molecular beam epitaxial regrowth,” J. Appl. Phys., vol. 67, pp. 4345–4348, 1990.