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1
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84936894853
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Monolithic HEMT-HBT integration by selective MBE
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Philadelphia, PA Oct.
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D. C. Streit, D. K. Umemoto, K. W. Kobayashi, and A. K. Oki, “Monolithic HEMT-HBT integration by selective MBE,” in IEEE GaAs IC Symp. Dig., Philadelphia, PA, Oct. 1994.
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(1994)
IEEE GaAs IC Symp. Dig.
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Streit, D.C.1
Umemoto, D.K.2
Kobayashi, K.W.3
Oki, A.K.4
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2
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0028546085
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35 GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE
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Nov.
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D. C. Streit, D. K. Umemoto, J. R. Velebir, K. W. Kobayashi, and A. K. Oki, “35 GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE” IEEE Microwave and Guided Wave Lett., vol. 4, no. 11, Nov. 1994.
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(1994)
IEEE Microwave and Guided Wave Lett.
, vol.4
, Issue.11
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Streit, D.C.1
Umemoto, D.K.2
Velebir, J.R.3
Kobayashi, K.W.4
Oki, A.K.5
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3
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84916065120
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Selective molecular beam epitaxy for integrated npn/pnp heterojunction bipolar transistors
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D. C. Streit, D. K. Umemoto, J. R. Velebir, K. W. Kobayashi, and A. K. Oki, “Selective molecular beam epitaxy for integrated npn/pnp heterojunction bipolar transistors,” J. Vac. Sci. Tech., vol. B10, pp. 1020–1022, 1992.
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(1992)
J. Vac. Sci. Tech.
, vol.B10
, pp. 1020-1022
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Streit, D.C.1
Umemoto, D.K.2
Velebir, J.R.3
Kobayashi, K.W.4
Oki, A.K.5
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4
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0026206522
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Integrated npn/pnp GaAs/AlGaAs HBT's grown by selective MBE
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D. K. Umemoto, J. R. Velebir, K. W. Kobayashi, A. K. Oki, and D. C. Streit, “Integrated npn/pnp GaAs/AlGaAs HBT's grown by selective MBE,” Electron. Lett., vol. 27, pp. 1517–1518, 1991.
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(1991)
Electron. Lett.
, vol.27
, pp. 1517-1518
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Umemoto, D.K.1
Velebir, J.R.2
Kobayashi, K.W.3
Oki, A.K.4
Streit, D.C.5
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5
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0026853734
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Complementary HBT push-pull amplifier by selective MBE
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K. W. Kobayashi, D. K. Umemoto, J. R. Velebir, A. K. Oki, and D. C. Streit, “Complementary HBT push-pull amplifier by selective MBE,” IEEE Microwave and Guided Wave Lett., vol. 2, pp. 149–150, 1992.
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(1992)
IEEE Microwave and Guided Wave Lett.
, vol.2
, pp. 149-150
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Kobayashi, K.W.1
Umemoto, D.K.2
Velebir, J.R.3
Oki, A.K.4
Streit, D.C.5
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6
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0027676891
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Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads
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K. W. Kobayashi, D. K. Umemoto, J. R. Velebir, A. K. Oki, and D. C. Streit, “Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads,” IEEE J. Solid-State Circuits, vol. 28, pp. 1011–1017, 1993.
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(1993)
IEEE J. Solid-State Circuits
, vol.28
, pp. 1011-1017
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Kobayashi, K.W.1
Umemoto, D.K.2
Velebir, J.R.3
Oki, A.K.4
Streit, D.C.5
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7
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0026221592
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High-reliability GaAs-AlGaAs HBT's by MBE with Be based doping and InGaAs emitter contacts
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D. C. Streit, A. K. Oki, D. K. Umemoto, J. R. Velebir, K. S. Stolt, F. M. Yamada, Y. Saito, M. E. Hafizi, S. Bui, and L. T. Tran, “High-reliability GaAs-AlGaAs HBT's by MBE with Be based doping and InGaAs emitter contacts,” IEEE Electron Dev. Lett., vol. 12, pp. 471–473, 1991.
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(1991)
IEEE Electron Dev. Lett.
, vol.12
, pp. 471-473
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Streit, D.C.1
Oki, A.K.2
Umemoto, D.K.3
Velebir, J.R.4
Stolt, K.S.5
Yamada, F.M.6
Saito, Y.7
Hafizi, M.E.8
Bui, S.9
Tran, L.T.10
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8
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0028430633
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A novel active feedback design using InAlAs/InGaAs heterojunction bipolar transistors
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May
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K. W. Kobayashi, L. T. Tran, J. R. Velebir, A. K. Oki, and D. C. Streit, “A novel active feedback design using InAlAs/InGaAs heterojunction bipolar transistors,” IEEE Microwave and Guided Wave Lett., vol. 4, no. 5, pp. 146–148, May 1994.
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(1994)
IEEE Microwave and Guided Wave Lett.
, vol.4
, Issue.5
, pp. 146-148
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Kobayashi, K.W.1
Tran, L.T.2
Velebir, J.R.3
Oki, A.K.4
Streit, D.C.5
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9
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0024935158
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Lossless broadband monolithic microwave active inductors
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Long Beach, CA
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S. Hara, T. Tokumitsu, and M. Aikawa, “Lossless broadband monolithic microwave active inductors,” in IEEE MTT-S Dig., Long Beach, CA, 1989, pp. 955–958.
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(1989)
IEEE MTT-S Dig.
, pp. 955-958
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Hara, S.1
Tokumitsu, T.2
Aikawa, M.3
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10
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0027814352
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Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators and switches
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Dec.
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K. W. Kobayashi, A. K. Oki, D. K. Umemoto, S. Claxton, and D. C. Streit, “Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators and switches,” IEEE Trans. Microwave Theory Tech., vol. 41, no. 12, pp. 2295–2302, Dec. 1993.
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(1993)
IEEE Trans. Microwave Theory Tech.
, vol.41
, Issue.12
, pp. 2295-2302
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Kobayashi, K.W.1
Oki, A.K.2
Umemoto, D.K.3
Claxton, S.4
Streit, D.C.5
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