High linearity monolithic broadband pseudomorphic spike-doped MESFET amplifiers

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 211-214

  Chu, S L G ^a   Huang, J C ^a   Bertrand, A ^a   Schindler, M J ^a   Struble, W ^a   Binder, R ^a   Hoke, W ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MESFET DEVICES; SEMICONDUCTING GALLIUM;

DC POWER CONSUMPTION; HIGH LINEARITY; STATE OF THE ART;

BROADBAND AMPLIFIERS;

EID: 84982282189     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247188     Document Type: Conference Paper

References (8)

1. S.L.G. Chu, et al, "A Highly Linear MESFET", 1991 TREE MTT-S Digest, pp. 725-728.
2. P.K. Ikalainen, L.C. Witkowski, "High Dynamic Range Microwave FET", Electronics Letters, vol. 27, no. 11, pp. 945-946: May 1991.
3. R. Pucel, "Field Effect Transistor", U.S. Patent #4,163,984, Aug. 7, 1979.
4. M.E. Kim, et al, "12-40 GHz Low Harmonic Distortion and Phase Noise Performance of GaAs HBTs", GaAs IC Sympo sium Technical Digest, 1988.
5. W. Struble, et al, "Modeling Intermodulation Distortion in GaAs MESFETs Using Pulsed I-V Characteristics", GaAs IC Symposium Technical Digest, pp. 179-182:1991.
6. S.A. Mass, "A General-Purpose Computer Program for the Volterra-Series Analysis of Nonlinear Microwave Circuits", IEEE MTT-s Int. Microwave Symp. Dig., pp. 311:1988.
7. A. Materka and T. Kacprzak, "Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics", TEEF, Transactions on MTT, February 1985.
8. B. L. Nelson, et al, "High-Linearity, Low DC Power GaAs HBT Broadband Amplifier to 11 GHz", GaAs IC Symposium Technical Digest, 1989.