Reliability of a high performance monolithic IC fabricated using a production GaAs/AlGaAs HBT process

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 271-274

  Yamada, F M ^a   Oki, A K ^a   Streit, D C ^a   Saito, Y ^a   Coulson, A R ^a   Atwood, W C ^a   Rezek, E A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MOLECULAR BEAM EPITAXY; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TECHNOLOGY;

MEDIAN TIME TO FAILURE; SELF ALIGNED BASE OHMIC METAL; STANDARD EVALUATION CIRCUIT; SUCCESSIVE DETECTION LOGARITHMIC AMPLIFIER;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0028695707     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)