Integrated npn/pnp Gaas/Aigaas HBTs Grown by Selective MBE

Electronics Letters

Volumn 27, Issue 17, 1991, Pages 1517-1518

  Umemoto, D K ^a   Velebir, J R ^a   Kobayashi, K W ^a   Oki, A K ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

MOLECULAR BEAM EPITAXY--APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

DC CHARACTERISTICS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); MERGED HBT PROCESSING TECHNOLOGY; MICROWAVE CHARACTERISTICS; NPN/PNP HBT'S;

TRANSISTORS, BIPOLAR;

EID: 0026206522     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910953     Document Type: Article

References (4)

1. Gray, P.R., and Meyer, R.G.: ‘Analysis and design of analog integrated circuits’ (John Wiley & Sons, New York, 1977)
2. Slater, D.B., Enquist, P.M., Najjar, F.E., Chen, M.Y., and Hutchby, J.A.: ‘Monolithic integration of complementary HBT's by selective MOVPE’, IEEE Electron Device Lett., 1990, 11, pp. 146-148
3. Streit, D., Oki, A., Umemoto, D., Velebir, J.R., Stolt, K.S., Tran, L., BUI, s., Hafizi, M., Kobayashi, K., and Saito, Y.: ‘High reliability GaAs/AIGaAs HBTs by MBE with Be doping and InGaAs emitter contacts’, to be published IEEE Electron Device Lett., September 1991
4. Sunderland, D.A., and Dapkus, P.D.: ‘Optimizing n-p-n and p-n-p hetero junction bipolar transistors for speed’, IEEE Trans., 1987, ED-34, pp. 367-377