Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources

IEEE Transactions on Nuclear Science

Volumn 27, Issue 6, 1980, Pages 1465-1468

  Brown, D B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - TRANSPORT PROPERTIES; LITHOGRAPHY; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; X-RAYS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0019242585     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4331052     Document Type: Article

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