Charge Trapping Versus Buried Oxide Thickness for SIMOX Structures

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 2114-2121

  Lawrence, R K ^a   Ioannou, D E ^b   Hughes, H L ^c   McMarr, P J ^d   Mrstik, B J ^c  

^a ARACOR   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; ION IMPLANTATION; OXIDES; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE; CHARGE TRAPPING; SEPARATION BY IMPLANTATION OF OXYGEN; THERMAL OXIDE;

RADIATION EFFECTS;

EID: 0029516283     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489261     Document Type: Article

References (12)

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