Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 309-314

  Pearton, S J ^a   Vartuli, C B ^a   Lee, J W ^a   Donovan, S M ^a   MacKenzie, J D ^a   Abernathy, C R ^a   Shul, R J ^a   McLane, G F ^a   Ren, F ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BROMINE; CHLORINE; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; IODINE; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR PLASMAS;

ION ASSISTED PROCESSES; PLASMA CHEMISTRIES;

DRY ETCHING;

EID: 0030370505     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)