Influence of hydrogen plasma passivation on electrical and optical properties of AlGaN samples grown on sapphire

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 607-611

  Polyakov, A Y ^a   Shin, M ^a   Pearton, S J ^a   Skowronski, M ^a   Greve, D W ^a   Freitas, J A ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (CHEMICAL); CARRIER CONCENTRATION; COMPOSITION EFFECTS; HYDROGEN BONDS; HYDROGENATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES;

ELECTRON MOBILITY; HYDROGEN PLASMA PASSIVATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030398528     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)