Modulation-Doped GaAs/AlGaAs Heterojunction Field-Effect Transistors (MODFET's), Ultrahigh-Speed Device for Supercomputers

IEEE Transactions on Electron Devices

Volumn 31, Issue 8, 1984, Pages 1015-1027

  Solomon, Paul M ^a   Morkoç, Hadis ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

ALUMINUM GALLIUM ARSENIDE; HETEROJUNCTION FIELD-EFFECT TRANSISTORS; MODFETS; MODULATION-DOPED FETS;

TRANSISTORS, FIELD EFFECT;

EID: 0021469892     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21654     Document Type: Article

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