Simple empirical relationship between mobility and carrier concentration

Electronics Letters

Volumn 10, Issue 13, 1974, Pages 259-260

  Hilsum, C ^a  

^a Royal Radar Establishment   (United Kingdom)

Author keywords

Carrier mobility; Impurity electron states and effects; Semiconductors

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0016069914     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19740205     Document Type: Article

References (4)

1. CONWELL, E. M.: ‘Properties of silicon and germanium’, Proc. Inst. Radio Eng., 1952, 40, pp. 1327–1337
2. moll, J. L.: ‘Physics of semiconductors’ (McGraw-Hill, 1964), pp. 192–193
3. RODE, D. L.: ‘Electron transport in GaAs’, Phys. Rev., 1971, 3B, pp. 2534–2541
4. RODE, D. L.: ‘Electron transport in InSb, InAs and InP’, Phys. Rev., 1971, 3B, pp. 327–3299