A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel

IEEE Electron Device Letters

Volumn 14, Issue 12, 1993, Pages 581-583

  Shieh, Hir Ming ^a   Hsu, Wei Chou ^a   Hsu, Rong Tay ^a   Wu, Chang Luen ^a   Wu, Tien Shou ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRON EMISSION; QUANTUM THEORY;

CHEMICAL VAPOR DEPOSITION; GAS FLOW RATES; GROWTH TEMPERATURE; HIGH ELECTRON MOBILITY; LIFT-OFF TECHNIQUES;

SEMICONDUCTOR DEVICES;

EID: 0027810304     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.260796     Document Type: Article

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