Gaas F.E.T.S with graded channel doping profiles

Electronics Letters

Volumn 13, Issue 14, 1977, Pages 408-409

  Williams, R E ^a   Shaw, D W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Field effect transistors; Gallium arsenide

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM ARSENIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0017515293     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770297     Document Type: Article

References (2)

1. SZE, S. M.: ‘Physics of semiconductor devices’ (Wiley, New York, 1969), pp. 346-351
2. MACKSEY, H. M., ADAMS, R. L., MCQUIDDY, D. N., SHAW, D. W., and WISSEMAN, W. R.: ‘Dependence of GaAs power MESFET microwave performance on device and material parameters’, IEEE Trans., 1977, ED-24, pp. 113-122