SCOPUS 정보 검색 플랫폼

Solid State Communications

Volumn 63, Issue 7, 1987, Pages 591-594

Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

(3) Schubert, E F a Cunningham, J E a Tsang, W T a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - ELECTRON STATES; MOLECULAR BEAM EPITAXY;

DOPED EPITAXIAL LAYERS; DOPING CONCENTRATIONS; ELECTRON-CONCENTRATION ENHANCEMENT; ELECTRON-MOBILITY ENHANCEMENT; HALL-MOBILITY MEASUREMENTS; MATERIAL-GROWTH TECHNOLOGIES;

SEMICONDUCTOR MATERIALS;

EID: 0023396425 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(87)90859-3 Document Type: Article

Times cited : (120)

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8
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9
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- Even though there may be some experimental results among the abundance of data on mobilities in n-type GaAs which give higher or lower mobilities than the Hilsum relation, the latter relation describes typical experimental results for n-type GaAs at T=300K.

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