Long-Term and Instantaneous Burnout in GaAs Power FET's: Mechanisms and Solutions

IEEE Transactions on Electron Devices

Volumn 28, Issue 7, 1981, Pages 834-840

  Wemple, Stuart H ^a   Niehous, William C ^a   Fukui, Hatsuaki ^a   Irvin, John C ^a   Cox, Herbert M ^a   Hwang, James C M ^a   Dilorenzo, James V ^a   Schlosser, Wolfgang O ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTOR;

TRANSISTORS, FIELD EFFECT;

EID: 0019392856     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20439     Document Type: Article

References (19)

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2. S. H. Wemple and W. C. Niehaus, “Source-drain burnout in GaAs FETs,” in Galium Arsenide and Related Compounds (Inst. Phys. Conf. Ser. No. 33b), p. 262.
3. R. Yamamoto, A. Higashisaka, and F. Hasegawa, “Light emission and burnout characteristics of GaAs power MESFET's,” IEEE Trans. Electron Devices, vol. ED-25, p. 567, 1978.
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8. W. C. Niehaus, “A direct correlation between GaAs FET ohmic contact morphology and device lifetime under accelerated source-drain drain bias aging,” to be published.
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15. H. Fukui, S. H. Wemple, J. C. Irvin, W. C. Niehaus, J. C. M. Hwang, H. M. Cox, W. 0. Schlosser, and J. V. DiLorenzo, “A reliability study of power GaAs FET field effect transistor,” in 18th Annu. Proc.-Reliability Physics 1980 (Apr. 8–10, Las Vegas, NV), p. 151.
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18. J. C. M. Hwang, “Deposition and characterization of silicon nitride films,” unpublished.
19. J. E. Griffiths, unpublished.