Light Emission and Burnout Characteristics of GaAs Power Mesfet's

IEEE Transactions on Electron Devices

Volumn 25, Issue 6, 1978, Pages 567-573

  Yamamoto, Ryuichiro ^a   Higashisaka, Asamitsu ^a   Hasegawa, Fumio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES;

MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0017983302     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19138     Document Type: Article

References (9)

1. M. Fukuta, K. Suyama, H. Suzuki, Y. Nakayama, and H. Ishikawa, “Power GaAs MESFET with a high drain-source breakdown voltage,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, pp. 312–317, June 1976.
2. W. C. Niehaus, H. M. Cox, B. S. Hewitt, S. H. Wemple, J. V. DiLorenzo, W. O. Schlosser, and F. M. Magalhaes, “GaAs Power MESFETs, '’ in Proc. 1976 Int. Symp. North Amer. Conf. on Gallium Arsenide and Related Compounds, pp. 271–280.
3. S. H. Wemple and W. C. Niehaus, “Source-drain burn -out in GaAs MESFETs,” in Proc. 1976 Int. Symp. North Amer. Conf. on Gallium Arsenide and Related Compounds, pp. 262–270.
4. T. Mimura, H. Suzuki, and M. Fukuta, “Visible light emission from GaAs field effect transistor,” Proc. IEEE (Lett.), vol. 65, pp. 1407–1408, Sept. 1977.
5. K. Ohata, T. Nozaki, and N. Kawamura, “Improved noise performance of GaAs MESFET with selective ion -implanted n+ source regions,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1129–1130, Aug. 1977.
6. T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of drain breakdown voltage of GaAs power MESFET's by a simple recess structure,” this issue, pp. 563–567.
7. M. A. Lampert and A. Rose, “Volume-controlled, two-carrier currents in solids: The injected plasma case,” Phys. Rev., vol. 121, no. 1, Jan. 1st, 1961.
8. K. Lehovec and R. S. Miller, “Field distribution in junction field-effect transistors at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-22, pp. 273–281, May 1975.
9. K. Yamaguchi, S. Asai, and H. Kodera, “Two-dimensional analysis of stability criteria of GaAs FET’s,” IEEE Trans, Electron Devices, vol. ED-23, pp. 1283–1290, Dec. 1976.