Isothermal current instability and local breakdown in GaAs fet

Electronics Letters

Volumn 28, Issue 13, 1992, Pages 1265-1267

  Kozlov, N A ^a   Sinkevitch, V F ^a   Vashchenko, V A ^a  

^a Russia   (Russian Federation)

Author keywords

Field effect transistors; Semiconductor devices and materials

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES, AVALANCHE;

CURRENT INSTABILITY; ISOTHERMAL FILAMENTS; LOCAL BREAKDOWN;

TRANSISTORS, FIELD EFFECT;

EID: 0026873967     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19920801     Document Type: Article

References (5)

1. Wemple, S. H., and Niehaus, W. C.: ‘Source-drain burnout in GaAs FET’s’. Gallium Arsenide and Related Compounds (Inst. Phys. Conf. Ser. No. 33b, 1977, pp. 262–270
2. Jantsch, W., and Heinrich, H.: ‘A method for subnanosecond pulse measurements of I-V characteristics’, Rev. Sci. Instrum., 1970, 41, pp. 228–230
3. Fainberg, V. I.: ‘Metod izmerenya impulsnih volt-ampernih haracteristic poluprovodnikovih priborov’. Poluprovodnikovaya technika and mikroelektronica (Naukova dumka, Kiev, USSR, 1980), N 32, pp. 59–63
4. Kozlov, N. A., Nechaev, A. M., Romanko, M. T., and Sinkevitch, V. F.: ‘Elekroluminescencia v structure polevuh transistorov’, Soviet J. Elektronnaya Technika, 1985, Ser. 2, N. 3 (176), pp. 22–34
5. Yamamoto, R., Higashisaka, A., and Hasegawa, F.: ‘Light emission and burnout characteristics of GaAs power MESFET’s’, IEEE Trans., 1978, ED-25, pp. 567–573