Arsenic passivation: A possible remedy for MBE growth-interruption problems

Electronics Letters

Volumn 20, Issue 1, 1984, Pages 47-48

  Kawai, N J ^a   Nakagawa, T ^a   Kojima, T ^a   Ohta, K ^a   Kawashima, M ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Epitaxy; Semiconductor devices and materials

Indexed keywords

ARSENIC PASSIVATION;

SEMICONDUCTOR MATERIALS;

EID: 0021755296     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19840033     Document Type: Article

References (5)

1. BOZLER, C. O., and ALLEY, G. D.: ‘Fabrication and numerical simulation of the permeable base transistor’, IEEE Trans., 1980, ED-27, pp. 1128-1141
2. KAWAI, N. J., WOOD, C. E. C. and EASTMAN, L. F.: ‘Carrier compensation at interfaces formed by molecular beam epitaxy’, J. Appl. Phys., 1982, 53, pp. 6208-6213
3. CHANG, C.-A., HEIBLUM, M., LUDEKE, R., and NATHAN, M. I.: ‘Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface’, Appl. Phys. Lett., 1981, 39, pp. 229-231
4. KOWALCZYK, S. P., MILLER, D. L., WALDROP, J. R., NEWMAN, P. G., and GRANT, R. W.: ‘Protection of molecular beam epitaxy grown AlxGa1-xAs epilayers during ambient transfer’, J. Vac. Sci. Technoi, 1981, 19, pp. 255-256
5. PRICE, G. L.: ‘Preservation and regeneration of an MBE grown surface’. Collected Papers of MBE-CST-2, Tokyo, 1982, pp. 259-262