A GaAs power MESFET operating at 3.3V drain voltage for digital hand-held phone

ETRI Journal

Volumn 16, Issue 4, 1995, Pages 1-11

  Lee, Jong Lam ^c   Kim, Haecheon ^c   Mun, Jae Kyung ^a   Kwon, Ohseung ^b   Lee, Jae Jin ^c   Hwang, In Duk ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; EFFICIENCY; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRIP DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; TELEPHONE SETS; CURRENT DENSITY; INTERMODULATION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; TELEPHONE;

AMPLIFYING DEVICES; GATE-TO-DRAIN BREAKDOWN; LINEAR OPERATIONS; MAXIMUM DRAIN CURRENT; OPERATION FREQUENCY; POWER-ADDED EFFICIENCY; THIRD ORDER INTERCEPT POINTS; THIRD ORDER INTERMODULATION;

MESFET DEVICES;

DIGITAL HAND HELD PHONE; GATE-TO-DRAIN BREAKDOWN; INTERCEPT POINT; LINEAR GAIN; POWER AMPLIFYING DEVICE;

EID: 0029203944     PISSN: 12256463     EISSN: 22337326     Source Type: Journal    
DOI: 10.4218/etrij.95.0195.0001     Document Type: Article

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