3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones

Electronics Letters

Volumn 30, Issue 9, 1994, Pages 739-740

  Park, S C ^a   Park, H M ^a   Lee, J J ^a   Kwon, O ^a   Mun, J K ^a   Kim, H ^a   Lee, J L ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

MESFETs; Power transistors

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); CORDLESS TELEPHONES; EFFICIENCY; EPITAXIAL GROWTH; GATES (TRANSISTOR); RADIO TELEPHONE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

HAND HELD TELEPHONES; POWER ADDED EFFICIENCY; POWER TRANSISTORS;

MESFET DEVICES;

EID: 0028413707     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940477     Document Type: Article

References (5)

1. NGO, D., BECKWTTH, B., O'NEIL, P., and CAMILLERI, N.: ‘Low voltage GaAs power amplifiers for personal communications at 1.9GHz’. IEEE MTT-S Dig., June 1993, pp. 1461–1464
2. IWATA, N., INOSAKO, K., and KUZUHARA, M.; ‘3V operation L-band power double-doped heterojunction FETs’, IEEE MTT-S Dig., June 1993, pp. 1465–1468
3. MURAI, S., SAWAI, T., YAMAGUCHI, T., and HARADA, Y.: ‘A high power-added efficiency GaAs power MESFET and MMIC operating at a very low drain bias for use in personal handy phones’, IEICE Trans.Electron, 1993, E76-C, pp. 901–907
4. MAEDA, M., NISHIJIMA, M., TAKEHARA, H., ADACHI, C., FUJIMOTO, H., OTA, Y., and ISHIKAWA, O.: ‘A 3.5V, 1.3W GaAs power multi chip IC for cellular phone’. GaAs IC Symp. Tech. Dig., October 1993, pp. 53–56
5. LEE, J.-L., KIM, D., MAENG, S.J., PARK, H.H., KANG, J.Y., and LEE, Y.T.; ‘Improvement of breakdown characteristics of GaAs power FET using treatment’, J. Appl. Phys., 1993, 73, pp. 3539–3524