High breakdown voltage MESFET with planar gate structure for low distortion power applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 181-184

  Kuwata, N ^a   Otobe, K ^a   Shiga, N ^a   Nakajima, S ^a   Sekiguchi, T ^a   Hashinaga, T ^a   Sakamoto, R ^a   Matsuzaki, K ^a   Nishizawa, H ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISTORTION; GATES (TRANSISTOR); PERFORMANCE; POWER CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SIMULATORS;

COMPRESSION POWER; DOPING DENSITY; GATE ELECTRODE; HIGH BREAKDOWN VOLTAGE MESFET; INTERCEPT POINT; LIGHTLY DOPED DRAIN STRUCTURE; LINEARITY FIGURE OF MERIT; PLANAR GATE STRUCTURE; RECESSED GATE STRUCTURE;

MESFET DEVICES;

EID: 0027794809     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)