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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2519-2521

Application of InAs freestanding membranes to electromechanical systems

(4) Yamaguchi, Hiroshi a Dreyfus, Remi a,b Miyashita, Sen c Hlrayama, Yoshiro a,d

a NTT Basic Research Laboratories (Japan)

b PSL RESEARCH UNIVERSITY (France)

c NTT Advance Technology Corporation (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

(111)A; InAs; MBE; MEMS; NEMS

Indexed keywords

ELECTROMECHANICAL DEVICES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY;

ELECTROMECHANICAL SYSTEMS; ELECTRON ACCUMULATION; NEMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0012659020 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2519 Document Type: Article

Times cited : (5)

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