Progress in 193nm resists: Impact of the development process on anhydride-containing resist materials

Journal of Photopolymer Science and Technology

Volumn 13, Issue 4, 2000, Pages 595-599

  Allen, Robert D ^a   Larson, Carl E ^a   Truong, Hoa D ^a   Brock, Phillip J ^a   Ito, Hiroshi ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

COMA; Contrast curves; Cyclic olefins; Maleic anhydride; Resist dissolution

Indexed keywords

ACID ANHYDRIDE; CYCLOALKENE; FREE RADICAL; MALEIC ANHYDRIDE; MONOMER; NORBORNENE DERIVATIVE; POLYMER;

ARTICLE; CONCENTRATION (PARAMETERS); DISSOLUTION; MATERIALS; PERFORMANCE; PLOTS AND CURVES; POLYMERIZATION; TECHNOLOGY; TIME;

EID: 0034585417     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.13.595     Document Type: Article

References (12)

1. Deep-UV resist technology
2. The potential of 193nm photore-sists