NH3 as nitrogen source in MBE growth of GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 135-139

  Kamp, M ^a   Mayer, M ^a   Pelzmann, A ^a   Thies, A ^a   Chung, H Y ^a   Sternschulte, H ^a   Marti, O ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CHARACTERIZATION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

GALLIUM NITRIDE; NITROGEN SOURCE; ON SURFACE CRACKING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029745814     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)