Microstructural evolution of {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 659-661

  Pan, G Z ^a   Tu, K N ^a   Prussin, S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); NUCLEATION; POINT DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; TRANSIENT ENHANCED DIFFUSION;

CRYSTAL MICROSTRUCTURE;

EID: 0031552846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119821     Document Type: Article

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