Defects induced by deep preamorphization and their effects on metal oxide semiconductor device characteristics

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1020-1024

  Miyake, Masayasu ^a,b   Takahashi, Mitsutoshi ^a  

^a NTT CORPORATION   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; TRANSMISSION ELECTRON MICROSCOPY;

DEEP PREAMORPHIZATION;

MOS DEVICES;

EID: 0031095527     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837523     Document Type: Article

References (11)

1. K. M. Cham and S. Chang, IEEE Trans. Electron Devices, ED-31, 964 (1984).
2. M. Miyake, This Journal. 137, 2860 (1990).
3. M. Miyake, T. Kobayashi, and Y. Okazaki, IEEE Trans. Electron Devices, ED-37, 2007 (1990).
4. M. Miyake, Y. Okazaki, and T. Kobayashi, ibid., ED-43, 444 (1996).
5. T. E. Seidel, R. Knoell, G. Poli, B. Schwartz, F. A. Stevie, and P. Chu, J. Appl. Phys., 58, 683 (1985).
6. C. Carter, W. Maszara, D. K. Sadana, G. A. Rozgonyi, J. Liu, and J. Wortman, Appl. Phys. Lett., 44, 459 (1984).
7. J. Narayan and O. W. Holland, This Journal, 131, 2651 (1984).
8. T. Kobayashi, S. Nakayama, M. Miyake, Y. Okazaki, and H. Inokawa, IEEE Trans. Electron Devices, ED-43, 311 (1996).
9. M. Miyake, S. Aoyama, S. Hirota, and T. Kobayashi, This Journal, 135, 2872 (1988).
10. W. O. Adekoya, M. Hage-Ali, J. C. Muller, and P. Siffert, Appl. Phys. Lett., 53, 511 (1988).
11. S. Prussin and K. S. Jones, This Journal, 137, 1912 (1990).