p-n junction-based wafer flow process for stencil mask fabrication

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3592-3598

  Rangelow, I W ^a   Shi, F ^a   Volland, B ^a   Sossna, E ^a   Petrashenko, A ^a   Hudek, P ^a   Sunyk, R ^a   Kostic, I ^a   Butschke, J ^b   Letzkus, F ^b   Springer, R ^b   Ehrmann, A ^c   Gross, G ^c   Kaesmaier, R ^c   Oelmann, A ^c   Struck, T ^c   Unger, G ^c   Chalupka, A ^d   Haugeneder, E ^d   Lammer, G ^d   Loschner H ^d   Tejeda, R ^e   Lovell, E ^e   Engelstad, R ^e   more..

^a UNIVERSITY OF KASSEL   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c SIEMENS AG   (Germany)

^d Ionen Mikrofabrikations Syst GmbH   (Austria)

^e UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000697910     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590500     Document Type: Article

References (18)

1. P Mauger, A. Shimkunas, J. Wolfe. S. Sen, H. Löschner, and G. Stengl, J. Vac Sci. Technol. B 10, 2819 (1992).
2. I. Rangelow, F. Shi, P. Hudek, I. Kostic, E. Hammel, H. Löschner, G. Stengl, and E. Cekan, Microelectron. Eng. 30, 257 (1996)
3. I. Rangelow, Deep Etching of Silicon (Polytechniks, 1996).
4. H. Löschner, G Gross, and I. Berry, "Ion Projection Lithography," White Paper submitted to SEMATECH, Sept. 1997 (IMS - Ionen Mikrofabrikations Systeme GmbH and Siemens AG, unpublished).
5. J. Wasson, J. Torres, H. Rampersad, J. Wolfe, P. Ruchhoeft, M. Herbordt, and H. Löschner, J. Vac. Sc,. Technol. B 15, 2214 (1997).
6. H, Ito, C. Wilson, and J. Frechet, U.S. Patent No. 4,491, 628 (1985).
7. A. Lamola, C. Szmanda, and J. Thackeray, Semicond. Sci. Technol. 34 53 (1991).
8. H. Ito, Semicond. Sci. Technol. 39, 164 (1996).
9. K. Kamon, K. Nakazawa, A. Yamaguchi, N. Matsuzawa, T. Kanziki, and S. Tagawa, J. Vac. Sci. Technol. B 15, 2610 (1997).
10. P. Hudek, I. Rangelow, I. Daraktehiev, and I. Kostic, Microelectron. Eng. 26, 169 (1995).
11. I. Rangelow, P. Hudek, I. Kostic, Z. Borkowicz, and G. Stangl, Microelectron. Eng. 23, 283 (1994).
12. G. Patsis, G. Meneghini, N. Glezos, and P. Argitis, J. Vac. Sci. Technol. B 15, 2561 (1997).
13. W. Conley, G. Breyta, B. Brunsvold, R. DePietro, D. Hofer, S. Holmes, H. Ito, R. Nunes, G. Fichtl, P. Hagerty, and J. Thackeray, Proc. SPIE 2724, 34 (1996).
14. P. Hudek, I. Kostic, M. Belov, I. Rangelow, F. Shi, G. Pawlowski, W. Spiess, H. Buschbeck, E. Cekan, S. Eder, and H. Löschner, J. Vac. Sci. Technol. B 15, 2550 (1997).
15. W. Conley, C. Barcock, R. Allen, R. Kunz, B. Peterson, K. Taira, and M. Shima. Semiconductor Fabtech, 7th ed. (ICG, 1998), p. 173.
16. H. Ito, G. Breyta, D. Hofer, R. Sooriyakumaran, K. Petrillo, and D. Seeger, J. Photopolym. Sci. Technol. 7. 433 (1994).
17. J. Thackeray, T. Fedynyshyn, D. Kang, M. Rajaratnam, G. Wallraff, J. Opitz and D. Hofer, J. Vac. Sci. Technol. B 14, 4267 (1996)
18. A. Fisher, R. Engelstad, and E. Lovell, Proc. SPIE (to be published).