Deep ultraviolet resists AZ DX-561 and AZ DX-1300P applied for electron beam and masked ion beam lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2550-2554

  Hudek, P ^a   Kostic, I ^a   Belov, M ^a   Rangelow, I W ^b   Shi, F ^b   Pawlowski, G ^c   Spiess, W ^c   Buschbeck, H ^d   Cekan, E ^d   Eder, S ^d   Loschner H ^d  

^a INSTITUTE OF CHEMISTRY   (Slovakia)

^b UNIVERSITY OF KASSEL   (Germany)

^c SANOFI   (France)

^d Ion Microfabrication Systems GmbH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000413432     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589683     Document Type: Article

References (9)

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4. P. Hudek, I. W. Rangelow, I. Kostic, P. Grabiec, and F. Shi, Proc. SPIE 2879, 182 (1996).
5. E. Hammel, H. Löschner, G. Stengl, H. Buschbeck, A. Chalupka, H. Vonach, E. Cekan, W. Fallmann, F. Paschke, and G. Stangl, Microelectron. Eng. 30, 241 (1996).
6. I. W. Rangelow, F. Shi, P. Hudek, I. Kostic, E. Hammel, H. Löschner, G. Stengl, and E. Cekan, Microelectron. Eng. 30, 257 (1995).
7. P. Hudek, I. W. Rangelow, I. S. Daraktchiev, and I. Kostic, Microelectron. Eng. 26, 167 (1995).
8. G. Pawlowski, M. Padmanaban, Y. Kinoshita, H. Okazaki, N. Suehiro, S. Funato, and K. J. Przybilla, Semicon Kansai, Osaka Japan, 1995 (unpublished).
9. I. W. Rangelow and H. Löschner, J. Vac. Sci. Technol. B 13, 2394 (1995).