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Volumn 81, Issue 12, 1997, Pages 7966-7969

Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method

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[No Author keywords available]

Indexed keywords


EID: 0006240385     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365398     Document Type: Article
Times cited : (19)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.