-
1
-
-
0033339220
-
Dielectric properties of hydrogen silsesquioxane films degraded by heat and plasma treatment
-
S.-W. Chung, J.-H. Shin, N.-H. Park and J. W. Park, "Dielectric properties of hydrogen silsesquioxane films degraded by heat and plasma treatment," Jpn. J. Appl. Phys., Part 1 38, 5214-5219 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 5214-5219
-
-
Chung, S.-W.1
Shin, J.-H.2
Park, N.-H.3
Park, J.W.4
-
2
-
-
0034291397
-
Comparative study of hydrido organo siloxane polymer and hydrogen silsesquioxane
-
S.-W. Chung, S.-T. Kim, J.-H. Shin, J. K. Kim and J. W. Park, "Comparative study of hydrido organo siloxane polymer and hydrogen silsesquioxane," Jpn. J. Appl. Phys., Part 1 39, 5809-5815 (2000).
-
(2000)
Jpn. J. Appl. Phys., Part 1
, vol.39
, pp. 5809-5815
-
-
Chung, S.-W.1
Kim, S.-T.2
Shin, J.-H.3
Kim, J.K.4
Park, J.W.5
-
3
-
-
0001350099
-
Poly(tetranouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer
-
J. J. Senkevich and S. B. Desu, "Poly(tetranouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer," Appl. Phys. Lett. 72, 258-260 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 258-260
-
-
Senkevich, J.J.1
Desu, S.B.2
-
4
-
-
0000739985
-
Novel porous films having low dielectric constants synthesized by liquid phase silylation of spin-on glass sol for intermetal dielectrics
-
N. Aoi, "Novel porous films having low dielectric constants synthesized by liquid phase silylation of spin-on glass sol for intermetal dielectrics," Jpn. J. Appl. Phys., Part 1 36, 1355-1359 (1997).
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 1355-1359
-
-
Aoi, N.1
-
5
-
-
0035938367
-
Direct patterning of photosensitive low-dielectric-constant films using electron-beam lithography
-
T. Kikkawa, T. Nagahara and H. Matsuo, "Direct patterning of photosensitive low-dielectric-constant films using electron-beam lithography," Appl. Phys. Lett. 78, 2557-2559 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2557-2559
-
-
Kikkawa, T.1
Nagahara, T.2
Matsuo, H.3
-
7
-
-
0035473548
-
Estimation of the dielectric properties of low-k materials using optical spectroscopy
-
to be published
-
K. Postava, T. Yamaguchi and M. Horie, "Estimation of the dielectric properties of low-k materials using optical spectroscopy," Appl. Phys. Lett. (2001) (to be published).
-
(2001)
Appl. Phys. Lett.
-
-
Postava, K.1
Yamaguchi, T.2
Horie, M.3
-
8
-
-
0038695308
-
Ellipsometry of thin film systems
-
ed. E. Wolf (North-Holand, Amsterdam)
-
I. Ohlídal and D. Franta, Ellipsometry of thin film systems, in: Progress in Optics ed. E. Wolf (North-Holand, Amsterdam, 2000), Vol. 41.
-
(2000)
Progress in Optics
, vol.41
-
-
Ohlídal, I.1
Franta, D.2
-
9
-
-
0040073234
-
Optical functions of low-k materials for interlayer dielectrics
-
K. Postava and T. Yamaguchi, "Optical functions of low-k materials for interlayer dielectrics," J. Appl. Phys. 89, 2189-2193 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 2189-2193
-
-
Postava, K.1
Yamaguchi, T.2
-
10
-
-
0000752509
-
Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate
-
K. Postava, H. Sueki, M. Aoyama, T. Yamaguchi, Ch. Ino, Y. Igasaki and M. Horie, "Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate," J. Appl. Phys. 87, 7820-7824 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 7820-7824
-
-
Postava, K.1
Sueki, H.2
Aoyama, M.3
Yamaguchi, T.4
Ino, Ch.5
Igasaki, Y.6
Horie, M.7
-
11
-
-
0035873356
-
2(1000 nm)/Si system by spectroscopic ellipsometry and reflectometry
-
2(1000 nm)/Si system by spectroscopic ellipsometry and reflectometry," Appl. Surf. Sci. 175-176, 270-275 (2001).
-
(2001)
Appl. Surf. Sci.
, vol.175-176
, pp. 270-275
-
-
Postava, K.1
Aoyama, M.2
Yamaguchi, T.3
-
12
-
-
18244427369
-
Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry
-
K. Postava, H. Sueki, M. Aoyama, T. Yamaguchi, K. Murakami and Y. Igasaki, "Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry," Appl. Surf. Sci. 175-176, 543-548 (2001).
-
(2001)
Appl. Surf. Sci.
, vol.175-176
, pp. 543-548
-
-
Postava, K.1
Sueki, H.2
Aoyama, M.3
Yamaguchi, T.4
Murakami, K.5
Igasaki, Y.6
-
13
-
-
33847596250
-
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
-
D. E. Aspens and A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B 27, 985-1009 (1983).
-
(1983)
Phys. Rev. B
, vol.27
, pp. 985-1009
-
-
Aspens, D.E.1
Studna, A.A.2
-
15
-
-
0003699225
-
-
Wadsworth Publishing Company
-
H. H. Willard, L. L. Merritt, Jr., J. A. Dean and F. A. Settle, Jr., Instrumental Methods of Analysis, 7th ed., Wadsworth Publishing Company, p. 287.
-
Instrumental Methods of Analysis, 7th Ed.
, pp. 287
-
-
Willard, H.H.1
Merritt Jr., L.L.2
Dean, J.A.3
Settle Jr., F.A.4
-
17
-
-
0001524926
-
Parameterization of the optical functions of amorphous materials in the interband region
-
G. E. Jellison, Jr. and F. A. Modine, "Parameterization of the optical functions of amorphous materials in the interband region," Appl. Phys. Lett. 69, 371-373 and 2137 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 371-373
-
-
Jellison Jr., G.E.1
Modine, F.A.2
-
19
-
-
0029287986
-
Reflection-transmission photoellipsometry: Theory and experiments
-
G. Bader, P. V. Ashrit, F. E. Girouard and Vo-Van Truong, "Reflection-transmission photoellipsometry: theory and experiments," Appl. Opt. 34, 1684-1691 (1995).
-
(1995)
Appl. Opt.
, vol.34
, pp. 1684-1691
-
-
Bader, G.1
Ashrit, P.V.2
Girouard, F.E.3
Truong, V.-V.4
-
20
-
-
0027192767
-
Approximate formulas for the reflectance, transmittance, and scattering losses of nonabsorbing multilayer systems with randomly rough boundaries
-
I. Ohlídal, "Approximate formulas for the reflectance, transmittance, and scattering losses of nonabsorbing multilayer systems with randomly rough boundaries," J. Opt. Soc. Am. A 10, 158-171 (1993).
-
(1993)
J. Opt. Soc. Am. A
, vol.10
, pp. 158-171
-
-
Ohlídal, I.1
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