Observation of MBE-grown cubic-GaN/GaAs and cubic-GaN/3C-SiC interfaces by high resolution transmission electron microscope

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 149-153

  Okumura, H ^a   Ohta, K ^b   Nagatomo, T ^b   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC STRUCTURE; FACETS; GAS SOURCE MOLECULAR BEAM EPITAXY; INTERFACE STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030190355     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01073-4     Document Type: Article

References (6)

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