Surface reconstructions and III-V stoichiometry: the case of cubic and hexagonal GaN

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 257-262

  Feuillet, O ^a   Hacke, P ^a   Okumura, H ^a   Hamaguchi, H ^a   Ohta, K ^a   Balakrishnan, K ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; MOLECULAR BEAM EPITAXY; NITRIDES; PHASE DIAGRAMS; SEMICONDUCTING GALLIUM COMPOUNDS; STOICHIOMETRY; SURFACE ACTIVE AGENTS;

GALLIUM NITRIDE; SURFACE PHASE DIAGRAMS; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0030645086     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)