Bandgap energy of cubic GaN

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 201-204

  Okumura, H ^a   Ohta, K ^b   Ando, K ^d   Ruhle W W ^c   Nagatomo, T ^b   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE;

CUBIC GALLIUM NITRIDE (GAN) EPITAXIAL LAYER; MAGNETIC CIRCULAR DICHROISM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031076174     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00166-9     Document Type: Article

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