Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 435-440

  Ohumura, H ^a   Balakrishnan, K ^a   Feuillet, G ^a   Ohta, K ^a   Hamaguchi, H ^a   Chichibu, S ^a   Ishida, Y ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030677106     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)