Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100)

Electrochemical and Solid-State Letters

Volumn 1, Issue 4, 1998, Pages 178-180

  Son, K A ^a   Mao, A Y ^a   Hess, D A ^a   Brown, L A ^a   White, J M ^a   Kwong, D L ^a,c   Roberts, D A ^b   Vrtis, R N ^b,c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Schumacher   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; NITROGEN; OXIDATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTRATES; TANTALUM COMPOUNDS; THERMAL EFFECTS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN TRANSFER; SILICON OXIDE FORMATION; TANTALUM SILICIDE FORMATION;

ULTRATHIN FILMS;

EID: 0032188067     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390677     Document Type: Article

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