MOCVD growth and properties of InGaN/GaN multi-quantum wells

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1157-1160

  Keller, S ^a   Abare, A C ^a   Minsky, M S ^a   Wu, X H ^a   Mack, M P ^a   Speck, J S ^a   Hu, E ^a   Coldren, L A ^a   Mishra, U K ^a   DenBaars, S P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Doping; GaN; InGaN; Multi Quantum Wells; Photoluminescence

Indexed keywords

COMPOSITION EFFECTS; LUMINESCENCE OF INORGANIC SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

SEMICONDUCTING GALLIUM NITRIDE; TRIMETHYLGALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031648339     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1157     Document Type: Article

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