Effects of Si-doping on luminescence properties of InxGa1 - xN epitaxial layers

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 611-615

  Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a   Sasaki, Fumio ^b   Kobayashi, Shunsuke ^b   Tani, Toshiro ^b  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Inxga1 xN ternary alloys; Localization; Photoluminescence; Si donor; Time resolved spectroscopy

Indexed keywords

OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

RECOMBINATION DYNAMICS; TIME RESOLVED SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18744426553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00210-3     Document Type: Article

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