Lithographic performance of a dry-etch stable methacrylate resist at 193 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 144-151

  Dammel, Ralph R ^a   Ficner, Stanley A ^a   Oberlander, Joseph E ^a   Klauck Jacobs, Axel ^a   Padmanaban, Munirathna ^a   Khanna, Dinesh N ^a   Durham, Dana L ^a  

^a CLARIANT CORPORATION   (United States)

Author keywords

193 nm lithography; 2 methyl adamantane methacrylate; Methacrylate resist; Mevalonic lactone methacrylate

Indexed keywords

193 NM LITHOGRAPHY; 2-METHYL-ADAMANTANE METHACRYLATE; DRY-ETCH; ETCH RATES; ETCH RESISTANCES; HIGH RESOLUTIONS; METHACRYLATE RESIST; MEVALONIC LACTONE METHACRYLATE; PLASMA ENVIRONMENTS;

THICKNESS MEASUREMENT;

EID: 0000136286     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312393     Document Type: Conference Paper

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