Electrical effects of Ar plasma damage on GaN diode rectifiers

Electrochemical and Solid-State Letters

Volumn 2, Issue 9, 1999, Pages 472-474

  Dang, G ^a   Zhang, A P ^a   Cao, X A ^a   Ren, F ^a   Cho, H ^a   Pearton, S J ^a   Shul, R J ^b   Zhang, L ^b   Hickman, R ^c   Van Hove, J M ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RECTIFIERS; PLASMA APPLICATIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032648659     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390874     Document Type: Article

References (19)

1. M. Shur, Solid-State Electron., 42, 2131 (1998).
2. J. C. Zolper, Solid-State Electron., 42, 2153 (1998).
3. C. E. Weitzel, J. W. Palmour, C. H. Custer, K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, IEEE Trans. Electron. Devices, 43, 1732 (1996).
4. Y. -F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars, and U. K. Mishra, IEEE Electron. Device Lett., 19, 50 (1998).
5. M. Yoder, IEEE Trans. Electron. Devices, 43, 1633 (1996).
6. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phanse, and J. M. Redwing, Appl. Phys. Lett., 74, 1266 (1999).
7. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. Dermott, IEEE Electron. Device Lett., 19, 198 (1998).
8. C. E. Weitzel and K. E. Moore, Mater. Res. Soc. Symp. Proc., 483, 111 (1998).
9. S. C. Binari, J. M. Redwing, G. Kelner, and W. Krupper, Electron. Lett., 33, 242 (1997).
10. C. B. Vartuli, S. J. Pearton, J. W. Lee, J. Hang, J. D. Mackenzie, C. R. Abernathy, and R. J. Shul, Appl. Phys. Lett., 69, 1426 (1996).
11. R. J. Shul, in GaN and Related Materials, S. J. Pearton, Editor, Gordon and Breach, New York (1997).
12. A. S. Usikov, W. L. Lundin, V. I. Ushakov, B. V. Pushnyi, N. M. Schmidt, Y. M. Zadiranov, and T. V. Shuhtra, in Microstructures and Microfabricated Systems IV, P. Hesketh, H. Hughes, and W. E. Bailey, Editors, PV 98-14, p. 57, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
13. A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, and I. Adesida, J. Electron. Mater., 27, 261 (1998).
14. J. Y. Chen, C. J. Pan, and G. C. Chi, Solid-State Electron., 43, 649 (1999).
15. C. R. Eddy and B. Molnar, Mater. Res. Soc. Symp. Proc., 395, 745 (1996).
16. K. Satore, A. Matsutani, T. Shirasawa, M. Mori, T. Hondu, T. Sakaguchi, F. Koyama, and K. Iga, Mater. Res. Soc. Symp. Proc., 449, 1029 (1997).
17. J. M. Van Hove, R. Hickman, J. J. Klaassen, P. P. Chow, and P. P. Ruden, Appl. Phys. Lett., 70, 282 (1997).
18. G. H. Kinchin and R. S. Pease, Rep. Prog. Phys., 18, 1 (1995).
19. S. J. Pearton, Mater. Sci. Rep., 4, 313 (1990).