The different modelling routes for SiC deposition by vapor techniques;Les différentes voies de modélisation macroscopique du procédé de dépôt de sic par voie gazeuse

Annales de Chimie: Science des Materiaux

Volumn 23, Issue 5-6, 1998, Pages 753-789

  Aubreton, J ^a   Blanquet, E ^b   Elchinger, M F ^a   Pons, M ^b  

^a Lab Mat Ceramiques Traitements S   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000267706     PISSN: 01519107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0151-9107(99)80022-1     Document Type: Article

References (113)

1. x(H) (1.5
2. Properties of Silicon Carbide, édité par G.L. Harris, Emis datareviews Series 13, Inspec Publication, London (1995).
3. M. Pons, E. Blanquet, J.M. Dedulle, I. Garcon, R. Madar, C. Bernard, Thermodynamic, heat and mass transport modeling of the sublimation growth of silicon carbide crystals, J. Electrochem. Soc, 143 (11) (1996) 3727-3735.
4. K.F. Jensen, Chemical Vapor Deposition, dans Microelectronics Processing, Advances in Chemical series 221, édité par D.W. Hess et K.F. Jensen, American Chemical Society, Washington DC (1989) 199-263.
5. C.R. Kleijn, C. Werner, Modeling of chemical vapor deposition of tungsten films, Birkhauser Verlag, Basel (1993).
6. C.R. Kleijn, Chemical vapor deposition processes, dans Computational Modeling in Semiconductor Processing, édité par M. Meyyappan, Artech House, Boston (1995) 97-229.
7. M. Meyyappan, Plasma process modeling, dans Computational Modeling in Semiconductor Processing, édité par M. Meyyappan, Artech House, Boston (1995) 231-323.
8. S. Nishino, J.A. Powell, H.A. Will, Production of large-area single-crystal wafers for cubic SiC for semiconductor devices, Appl. Phys. Lett., 42 (5) (1983) 460-462.
9. S. Karmann, C. Haberstroh, F. Engelbretch, CVD growth and characterization of single-cristalline 6H silicon carbide, Physica B, 185 (1993) 75-78.
10. N. Bécourt, J.L. Ponthenier, A.M. Papon, C. Jaussaud, Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon, Physica B, 185 (1993) 79-84.
11. N. Bécourt, Etude de la croissance cristalline de carbure de silicium et des technologies pour la réalisation de transistors MOS, thèse, Université de Montpellier (1993).
12. N. Nordel, S.G. Andersson, A. Shoner, A new reactor concept for epitaxial growth of SiC, Technical Digest of the Int. Conf. on SiC and Related Materials-ICSRM-95, Kyoto, Japan, (1995) 33-34.
13. M.I. Chaudhry, R.J. Mc Cluskey, R.L. Wright, Role of carrier gases in epitaxial growth of β-SiC on Si by CVD, J. Cryst. Growth, 113 (1991) 120-126.
14. K. Takahashi, S. Nishino, J. Saraie, Effect of acceptor impurity addition in low temperature growth of 3C-SiC, J. Cryst. Growth, 115 (1991) 617-622.
15. 2 CVD reaction system, Technical Digest of the Int. Conf. on SiC and Related Materials-ICSRM-95, Kyoto, Japan (1995) 39-40.
16. 2 in synthesis of SiC films by LPCVD using macro/microgravity method, J. Electrochem. Soc., 139 (12) (1992) 3652-3659.
17. C. Vincent, J. P. Scarff, H. Vincent, J. Bouix, N. Lofti, T.S. Kannan, Chemical interaction during the chemical vapour deposition of silicon carbide on aluminosilicate fibres from halogenated precursors, J. Mat. Sci., 29 (1994) 1-10.
18. K. Murooka, I. Higashikawa, Y. Gomei, Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition, J. Cryst. Growth, 169 (1996) 485-490.
19. T. Kaneko, T. Okuno, H. Yumoto, Growth kinetics of silicon carbide CVD, J. Cryst. Growth, 91 (1988) 599-604.
20. X. Tang, R. Haubner, B. Lux, A. Zechmann, E. Hengge, Preparation of β-SiC using 1,2-Diméthyldisilane as precursor, J. Phys. II, 5 (1995) 777-784.
21. 3 as a source gas, J. Cryst. Growth, 147 (1995) 111-116.
22. 1-x films for the preparation of composite material using both organosilicon and hydrocarbon precursors, Thin Solid Films, 209 (1992) 52-58.
23. N. Herlin, M. Lefebvre, M. Péalat, J. Perrin, Investigation of the Assisted Chemical Vapor deposition from tetramethylsilane by in situ temperature and gas composition measurements, J. Phys. Chem., 96 (1992) 7063-7072.
24. W. Zhang, M. Lelogeais, M. Ducarroir, Process study of silicon carbide deposited on steel by plasma-assisted chemical vapor deposition from tetramethylsilane-argon system, Jpn. J. Appl. Phys., 31 (1992) 4053-4060.
25. S. Scordo, Contribution à l'étude de revètements durs Si-C sur acier par dépôt chimique à partir d'une phase gazeuse activée par un plasma micro-onde ou radiofréquence, thèse, Université de Perpignan (1995).
26. M. Andrieux, Revêtements sur acier par PACVD Radio fréquence et micro-onde : diagnostic de la phase gazeuse et optimisation de la tenue mécanique, thèse, Université de Perpignan (1997).
27. A. Figueras, S. Garelik, R. Rodriguez-Clemente, B. Armas, C. Combescure, C. Dupuy, A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane, J. Cryst. Growth, 110 (1991) 528-542.
28. R. Rodriguez-Clemente, A. Figueras, S. Garelik, B. Armas, C. Combescure, Influence of temperature and tetramethylsilane partial pressure on the b-SiC deposition by cold-wall chemical vapor deposition, J. Cryst. Growth, 125 (1992) 533-542.
29. 2/Si(100) substrates, J. Cryst. Growth, 155 (1995) 214-222.
30. 4 on CVD β-SiC growth, J. Electrochem. Soc., 137 (11) (1990) 3688-3692.
31. C. Prebende, Mécanismes physico-chimiques mis en jeu dans le processus CVD d'élaboration de céramiques à base de carbure de silicium en réacteur à parois chaudes, thèse, Université de Bordeaux (1989).
32. D. Lespiaux, F. Langlais, R. Naslain, S. Schamm, J. Sevely, Correlations between gas phase supersaturation, nucleation process and physical-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates, J. Mat. Sci., 30 (1995) 1500-1510.
33. 2 gas precursor, J. Cryst. Growth, 155 (1995) 198-204.
34. M. Ganz, N. Dorval, M. Lefebvre, M. Péalat, F. Loumagne, F. Langlais, In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane, J. Electrochem. Soc., 143 (5) (1996) 1654-1661.
35. A.M. Wrobel, A. Walkiewicz-Pietrzykowska, Film-forming precursors in plasma chemical vapor deposition using tetramethyl-1,3-Disilacyclobutane as a source compound, J. CVD, 4 (1995) 87-110.
36. G. Ferro, Y. Monteil, H. Vincent, F. Cuavet, J. Bouix, P. Durupt, J. Olivier, B. Bisar, Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapor deposition, Thin Solid Films, 278 (1996) 22-27.
37. x vapour deposition, Appl. Surf. Sci., 91 (1995) 34-43.
38. C. Bernard, M. Pons, R. Madar, The CVD process : modelling aspects, International Conference on CVD, San Francisco, April 1996, Chemical Vapor Deposition, Electrochemical Society Proceeding, 96-5 (1996) 59-66.
39. M. Pons, C. Bernard, R. Madar, Numerical modeling for CVD simulation and process optimization : coupled thermochemical and mass transport approaches, Surf. Coat. Technol., 41 (1993) 274-281.
40. C. Bernard, R. Madar, Benefits and limits of the thermodynamic approach to CVD process, Mat. Res. Soc. Symp., 168 (1990) 3-17.
41. 2 films using tungsten chlorides and silane, J. Electrochem. Soc., 140 (1993) 475-484.
42. C.R. Kleijn, A mathematical model of the hydrodynamics and gas-phase reactions in silicon LPCVD in a single wafer reactor, J. Electrochem. Soc., 138 (1991) 2190-2200.
43. Y.B Wang, F. Teyssandier, J. Simon, R. Feurer, Chemical vapor deposition of silicon from disilane under reduced pressure in a circular impinging jet reactor. Simulation and experiments, J. Electrochem. Soc., 141 (1994) 824-842.
44. Y.B Wang, C. Chaussavoine, F. Teyssandier, 2D modelling of a non-confined circular impinging jet reactor, J. Crystal Growth, 126 (1993) 373-395.
45. K.F. Jensen, H. Moffat, Three-dimensional flow effects in silicon CVD in horizontal reactors, J. Electrochem. Soc., 135 (1988) 459-491.
46. M.E. Coltrin, R.J. Kee, J.A. Miller, A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor, J. Electrochem. Soc., 131 (1984) 425-434.
47. M.E. Coltrin, R.J. Kee, G.H. Evans, A mathematical model of the fluid mechanics and gas-phase chemistry in a rotating disk chemical vapor deposition reactor, J. Electrochem. Soc., 136 (1989) 819-829.
48. P. Duverneuil, J.P. Couderc, Two- dimensional modelling of low-pressure chemical vapor deposition hot wall tubular reactors I, J. Electrochem. Soc., 139 (1992) 296-304.
49. J.P. Couderc, CVD process engineering, modelling aspects, J. Phys. IV, 3 (1993) 3-16.
50. E. Blanquet, S.A. Gokoglu, An approach to develop and verify tractable chemical models for the CVD of Si, C and SiC, CVD XII International Symposium on CVD, édité par K.F. Jensen et G.W. Cullen, Pro. Vol. 93-2, The Electrochemical Society, Pennington, NJ (1993) 103-110.
51. N.B. Slater, Theory of unimolecular reactions, Cornel Press, Ithaca, NY (1959).
52. T.A. Clark, A handbook of computational chemistry, John Wiley Sons, NY (1985)
53. M.E. Coltrin, R.J. Kee, F.M. Rupley, Surface Chemkin: a general formalism and software for analysing heterogeneous chemical kinetics at a gas-surface, Int. J. Chem. Kinetics, 23 (1991) 1111-1128
54. M. Pons, A. Benezech, P. Huguet, R. Gaufres, Ph. Diez, Comparison of Raman measurements and mass transport modeling for the chemical vapor deposition of tungsten in the 773-1073K temperature range, J. Chem. Vap. Dep., 2 (1993) 135-165.
55. A. Ern and V. Giovangigli, Multicomponent Transport Algorithms, Lecture Notes in Physics, New Series Monographs, M 24, Springer-Verlag, Heidelberg (1994).
56. A. Ern and V. Giovangigli, Fast and accurate multicomponent transport property evaluation, J. Comput. Phys., 120 (1995) 105-116.
57. A. Ern and V. Giovangigli, On the evaluation of thermal diffusion coefficients in chemical vapor deposition processes, J. CVD, 3 (1995) 3-31.
58. R.J. Kee, G. Dixon-Lewis, J. Warnatz, M.E. Coltrin, J.A. Miller, A fortran computer code package for the evaluation of gas-phase multicomponent transport properties, Sandia National Laboratories Report, SAND 86-8246 (1986).
59. Phoenics est un produit de CHAM Ltd., Wimbledon, London, GB.
60. Fluent est un produit de Fluent Inc., Lebanon, NH.
61. Fidap est un produit de Fluid Dynamics Int., Evanston, IL.
62. CFD-ACE est un produit de CFD Research Corp., Hunstville, AL
63. Flux-Expert est un produit de DT2I, Meylan, France.
64. M.J. Kushner, Advances in Plasma Equipment Modeling, Solid State Technol., 39 (6) (1996) 135-144.
65. J.P. Boeuf, Numerical model of rf glow discharges, Phys. Rev. A, 36 (1987) 2782-2792.
66. A. Rhallabi, E. Gogolides, G. Turban, Modeling of Plasma Surface Interactions, Le Vide, 280 (1996) 185-203.
67. M. Moisan, C.M. Ferreira, J. Hubert, J. Margot, Z. Zakrzewski, Surface-wave sustained plasmas : toward a better understanding of RF microwave discharges, dans Phenomena in ionized gases, édité par K.H. Becker, W.E. Carr et E. Kunhardt, AIP conference proceedings 363, AIP press, Woodburry, NY (1996) 25-40.
68. B. Despax, Analyse et Modélisation du Fonctionnement des Réacteurs de Traitement des Surfaces Assisté par Plasma, CIP 93 Proceedings, Supplément Le Vide et les Couches Minces, 266 (1993) 17-26.
69. A.H. Cacquineau, Modélisation numérique de réacteurs plasmas : analyse des processus chimiques et étude de dispositifs de conception variée, thèse, Université Paul Sabatier, Toulouse (no 2453) (1996).
70. L. Layellon, P. Duverneuil, J.P. Couderc, B. Despax, Analysis and modelling of plasma enhanced CVD reactors. Part I : two dimensional treatment of a-Si:H deposition, Plasma Sources Sci. Technol., 3 (1994) 61-71.
71. A. Dollet, J.P. Couderc, B. Despax, Analysis and numerical modelling of silicon nitride deposition in a plasma enhanced chemical vapour deposition reactor. Part I : bidimensional modelling, Plasma Sources Sci. Technol., 4 (1995) 94-106.
72. 2 plasma obtained under diamond deposition discharge conditions, J. CVD, 5 (1996) 38-48.
73. R.P. Brinkmann, C. Werner, R. Furst, The effective drift-diffusion plasma model and its implementation into Phoenics-CVD, Phoenics J., 8 (1995) 455-464.
74. A.L. Kingon, Thermodynamic calculations for the Chemical Vapor Deposition of silicon carbide, J. Am. Ceram. Soc., 66 (1983) 558-566.
75. G.S. Fishman, W. T. Petuskey, Thermodynamic analysis and kinetic implications of Chemical Vapor Deposition of SiC from Si-C-H-Cl gas system, J. Am. Ceram. Soc., 68 (4) (1985) 185-190.
76. Mélange/ Gémini est un produit du LTPCM-Thermodata, BP 75 38402 Saint Martin D'Hères, France.
77. G. Ericksson, K. Hack, Chemsage, a computer program for the calculation of complex chemical equilibria, Met. Trans B, 21 (1990) 1013-1023.
78. Janaf Thermochemical Tables 3rd ed., J. Phys. Chem. Ref. Data, 14, Supl. 1 (1986).
79. SGTE, Thermodata, BP 66, 38402 Saint Martin D'Hères, France.
80. I. Barin, Thermochemical Data of pure substances, 1989, VCH Editor, Weinheim, Germany.
81. th edition, Hemisphere Publishing Corporation, NY (1990).
82. M.D. Allendorf, C. Melius, Theoretical Study of the thermochemistry of molecules in the Si-C-H system, J. Phys. Chem., 96 (1992) 428-437.
83. M.D. Allendorf, C. Melius, Theoretical Study of the thermochemistry of molecules in the Si-C-Cl-H system, J. Phys. Chem., 97, 1993, 720-728.
84. M.D. Allendorf, Equilibrium prediction of the role of organosilicon compounds on the chemical vapor deposition of silicon carbide, J. Electrochem. Soc., 140 (1993) 747-753.
85. C.D. Stinespring, J.C. Wormhoudt, Surface studies relevant to silicon carbide chemical vapor deposition, J. Appl. Phys., 65 (4) (1989) 1733-1735.
86. K.P. Huber, G. Herzberg, Molecular spectra and molecular structure, IV Constants of diatomic Molecules, VNR (1979).
87. n (n=1,4), J. Chem. Phys, 86 (3) (1987) 1235-1248.
88. P. Rocabois, C. Chatillon, C. Bernard, Thermodynamics of the Si-C system, II Mass spectrometric determination of the enthalpies of formation of molecules in the gaseous phases, High temperatures high pressures, 27-28 (1995/1996) 25-39.
89. P. Rocabois, C. Chatillon, C. Bernard, Thermodynamics of the Si-C system, I Mass spectrometric sudies of the condensed phases at high temperature, High temperatures high pressures, 27-28 (1995/1996) 3-23.
90. P. André, M. Abbaoui, A. Lefort and M.J. Parizet, Plasma Chemistry and Plasma Processing, 16 (3) (1996) 379-398.
91. 2 plasmas, à paraître dans Plasma Chemistry and Plasma Processing.
92. 2 Chemical Vapor Deposition reaction system, Appl. Phys. Lett., 61 (8) (1992) 910-912.
93. S.A. Gokoglu, M.A. Kuszmarski, A kinetic and equilibrium analysis of silicon carbide CVD on monofilaments, Proceeding Electrochemical Society, vol. 93(2), édité par K.F. Jensen et G.W. Cullen, Electrochem Soc. (1993) 392-400.
94. C.D. Stihespring, J.C. Wormhoudt, Gas phase kinetics analysis and implications for the silicon carbide chemical vapor deposition, J. Cryst. Growth, 87 (1988) 481-493.
95. K.D. Annen, C.D. Stinespring, M.A. Kuczmarski, J. A. Powell, Modeling of the SiC chemical vapor deposition process and comparison with experimental results, J. Vac. Sci. Technol. A, 8 (3) (1990) 2970-2975.
96. M.D. Allendorf, R.J. Kee, A model for silicon carbide vapor deposition, J. Electrochem.Soc., 138 (3) (1991) 841-852.
97. 2 during CVD of silicon carbide form the Si-C-H-Cl system. Correlations with the nucleation process, Thin Solid Films, 265 (1995) 40-51.
98. M.D. Allendorf, T.H. Osterheld, Modeling the gas-phase chemistry of silicon carbide formation, Mat.Res.Soc.Symp., 263 (1995) 39-44.
99. G.D. Papasouliotis, S.V. Sotirchos, On the homogeneous chemistry of the thermal decomposition of methyltrichlorosilane, J. Electrochem. Soc., 141 (1994) 1599-1611.
100. Emcore Corporation, 3 Rue Mozart, 44240 La Chapelle Sur Erdre, France : http://www.emcore.com.
101. Cape Simulation, Newto, Ma 02158, USA, http://www.capesim.com.
102. Y.B Wang, C. Bisch, F. Teyssandier, Optimization of wall-less like reactor by simulation, Chem. Eng. Sci., 50 (10) (1995) 1605-1617.
103. M.A. Kuszmarski, Analysis of transport in a CVD silicon carbide deposition reactor, J. CVD, 2(1) (1993) 20-41.
104. F. de Jong, M. Meyyappan, Numerical modelling of silicon carbide chemical vapor deposition, Diamond Rel. Mat., 5 (1996) 141-150.
105. Yu.N. Makarof, D. Hofmann, Modeling of sublimation growth of SiC : critical evaluation of models and software, International conference on Silicon Carbide and Related Materials, Stockholm, Suède, septembre 1997, extended abstract.
106. E. Blanquet, S.A. Gokoglu, Tractable chemical models for CVD of silicon and carbon, J. Phys. IV, C3 (3) (1993) 43-49.
107. J.H. Ho, S.I. Woo, Computer simulation study on atmospheric pressure CVD process for amorphous silicon carbide, J. Electrochem. Soc., 137 (7) (1990) 2215-2222.
108. NIST Database Chemical Database, Version 4.0, 1992, Gaithersburg, MD, USA.
109. J. Warnatz, Rate coefficients in the C/H/O system, dans Combustion Chemistry, édité par W.C. Gardiner Jr, Springer-Verlag, (1983) 197-360.
110. K.J. Kuijlaars, C.R. Kleijn, H.E.A. van den Akker, Multi-component diffusion in multiple-wafer chemical vapor deposition reactors, Chem. Eng. J., 57 (1995) 127-136.
111. K.J. Kuijlaars, C.R. Kleijn, H.E.A. van den Akker, Modeling of a cold-wall tungsten CVD reactor, Phoenics J., 8 (1995) 465-490.
112. M. Andrieux, S. Scordo, M. Ducarroir, L. Thomas, R. Berjoan, J.-L. Auberteau, Dépôts par plasma CVD microonde à partir de mélanges tetraméthylsilane-argon : influence des paramètres expérimentaux, Ann. Chim. Sci. Mat., 23 (1998) présent numéro.
113. M. Andrieux, J.M. Badie, M. Ducarroir, L. Thomas, Etude par spectrométrie d'émission de décharges radiofréquence et microonde lors de dépôt chimique en phase gazeuse (PACVD) dans le système Si-C-H-Ar, Ann. Chim. Sci. Mat., 23 (1998) présent numéro.