Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition

Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 485-490

  Murooka, Ken Ichi ^a   Higashikawa, Iwao ^a   Gomei, Yoshio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; FILM GROWTH; NUCLEATION; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEMICONDUCTING FILMS;

FILM STRESS; GROWTH RATE; HYDROGEN CHLORIDE GAS;

SILICON CARBIDE;

EID: 0030412274     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00415-0     Document Type: Article

References (13)

1. K. Minato and K. Fukuda, J. Nucl. Mater. 60 (1987) 233.
2. J. Federer, Thin Solid Films 40 (1977) 89.
3. H. Daimon, M. Yamanaka, M. Shinohara, E. Sakuma, S. Misawa, K. Endo and S. Yoshida, Appl. Phys. Lett. 51 (1987) 2106.
4. J.W. Palmour, H.S. Kong and R.F. Davis, J. Appl. Phys. 64 (1988) 2168.
5. W. von Muench and P. Hoeck, Solid-State Electron. 21 (1978) 479.
6. Y.C. Wang, R.F. Davis and J.A. Edmond, J. Electron. Mater. 20 (1991) 289.
7. M.D. Allendorf and R.J. Kee, J. Electrochem. Soc. 138 (1991) 841.
8. R.I. Fuentes, J. Vac. Sci. Technol. B 10 (1992) 3159.
9. K. Murooka, M. Itoh, H. Komano and Y. Gomei, Jpn. J. Appl. Phys. 30 (1991) 3074.
10. J. Bloem and W.A.P. Claassen, J. Crystal Growth 49 (1980) 435.
11. H. Nagasawa and Y. Yamaguchi, Appl. Surf. Sci. 82/83 (1994) 405.
12. J.A. Powell, L.G. Matus and M.A. Kuczmarski, J. Electrochem. Soc. 134 (1987) 1558.
13. S. Karmann, C. Haberstroh, F. Engelbrecht, W. Suttrop, A. Schöner, M. Schadt, R. Helbig, G. Pensl, R.A. Stein and S. Leibenzeder, Physica B 185 (1993) 75.