Ultra-Shallow Junction Formation Using Silicide as a Diffusion Source and Low Thermal Budget

IEEE Transactions on Electron Devices

Volumn 39, Issue 11, 1992, Pages 2486-2496

  Wang, Qingfeng ^a,b   Osburn, Carlton M ^a,b   Canovai, Christopher A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HEAT TREATMENT; ION IMPLANTATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

IMPLANTATION ENERGY; ION IMPLANTATION THROUGH SILICIDE; RAPID ANNEALING; SILICIDE/SILICON INTERFACE; ULTRA-SHALLOW JUNCTION FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0026954491     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.163462     Document Type: Article

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